Paolo Magnone
Paolo Magnone
Verified email at unipd.it
TitleCited byYear
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
1092009
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
582006
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies
P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
492011
High-mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD
J Mitard, L Witters, MG Bardon, P Christie, J Franco, A Mercha, ...
2010 International Electron Devices Meeting, 10.6. 1-10.6. 4, 2010
422010
Performance analysis of rear point contact solar cells by three-dimensional numerical simulation
M Zanuccoli, R De Rose, P Magnone, E Sangiorgi, C Fiegna
IEEE Transactions on Electron Devices 59 (5), 1311-1319, 2012
362012
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
AN Tallarico, S Stoffels, P Magnone, N Posthuma, E Sangiorgi, ...
IEEE Electron Device Letters 38 (1), 99-102, 2016
352016
Matching performance of FinFET devices with fin widths down to 10 nm
P Magnone, A Mercha, V Subramanian, P Parvais, N Collaert, M Dehan, ...
IEEE electron device letters 30 (12), 1374-1376, 2009
352009
Understanding the basic advantages of bulk FinFETs for sub-and near-threshold logic circuits from device measurements
F Crupi, M Alioto, J Franco, P Magnone, M Togo, N Horiguchi, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 59 (7), 439-442, 2012
312012
Analytical model for the noise in the tunneling current through metal-oxide-semiconductor structures
F Crupi, G Giusi, G Iannaccone, P Magnone, C Pace, E Simoen, C Claeys
Journal of Applied Physics 106 (7), 073710, 2009
272009
FinFET mismatch in subthreshold region: Theory and experiments
P Magnone, F Crupi, A Mercha, P Andricciola, H Tuinhout, RJP Lander
IEEE transactions on electron devices 57 (11), 2848-2856, 2010
252010
Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices
P Magnone, V Subramanian, B Parvais, A Mercha, C Pace, M Dehan, ...
Microelectronic Engineering 85 (8), 1728-1731, 2008
252008
Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs
D Maji, F Crupi, E Amat, E Simoen, B De Jaeger, DP Brunco, CR Manoj, ...
IEEE transactions on electron devices 56 (5), 1063-1069, 2009
242009
Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation
R De Rose, M Zanuccoli, P Magnone, M Frei, E Sangiorgi, C Fiegna
IEEE Journal of Photovoltaics 3 (1), 159-167, 2012
232012
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation Mechanisms
AN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (1), 38-44, 2017
212017
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells
M Zanuccoli, P Magnone, E Sangiorgi, C Fiegna
Solar Energy 116, 37-44, 2015
212015
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications
G Paternoster, M Zanuccoli, P Bellutti, L Ferrario, F Ficorella, C Fiegna, ...
Solar Energy Materials and Solar Cells 134, 407-416, 2015
212015
Understanding the potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements
P Magnone, F Crupi, M Alioto, B Kaczer, B De Jaeger
IEEE transactions on very large scale integration (VLSI) systems 19 (9 …, 2010
212010
Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs
F Crupi, P Magnone, S Strangio, F Iucolano, G Meneghesso
IEEE Transactions on Electron Devices 63 (5), 2219-2222, 2016
192016
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
S Chabukswar, D Maji, CR Manoj, KG Anil, VR Rao, F Crupi, P Magnone, ...
Microelectronic Engineering 87 (10), 1963-1967, 2010
182010
Local shunting in multicrystalline silicon solar cells: distributed electrical simulations and experiments
D Giaffreda, P Magnone, M Meneghini, M Barbato, G Meneghesso, ...
IEEE Journal of Photovoltaics 4 (1), 40-47, 2013
172013
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