| A silicon 60-GHz receiver and transmitter chipset for broadband communications SK Reynolds, BA Floyd, UR Pfeiffer, T Beukema, J Grzyb, C Haymes, ... IEEE Journal of Solid-State Circuits 41 (12), 2820-2831, 2006 | 415 | 2006 |
| RF circuit design aspects of spiral inductors on silicon JN Burghartz, DC Edelstein, M Soyuer, HA Ainspan, KA Jenkins IEEE Journal of Solid-State Circuits 33 (12), 2028-2034, 1998 | 372 | 1998 |
| Microwave inductors and capacitors in standard multilevel interconnect silicon technology JN Burghartz, M Soyuer, KA Jenkins IEEE Transactions on Microwave Theory and Techniques 44 (1), 100-104, 1996 | 314 | 1996 |
| Method for designing high-Q inductors in silicon technology without expensive metalization S Ponnapalli, M Soyuer, JF Ewen US Patent 5,497,337, 1996 | 253 | 1996 |
| High-Q inductors in silicon technology without expensive metalization JE Ewen, S Ponnapalli, M Soyuer US Patent 5,446,311, 1995 | 250 | 1995 |
| Multilevel-spiral inductors using VLSI interconnect technology JN Burghartz, KA Jenkins, M Soyuer IEEE Electron device letters 17 (9), 428-430, 1996 | 211 | 1996 |
| Integrated RF and microwave components in BiCMOS technology JN Burghartz, M Soyuer, KA Jenkins IEEE Transactions on Electron Devices 43 (9), 1559-1570, 1996 | 146 | 1996 |
| Frequency limitations of a conventional phase-frequency detector M Soyuer, RG Meyer IEEE Journal of solid-state circuits 25 (4), 1019-1022, 1990 | 123 | 1990 |
| Multilevel monolithic inductors in silicon technology M Soyuer, JN Burghartz, KA Jenkins, S Ponnapalli, JF Ewen, WE Pence Electronics letters 31 (5), 359-360, 1995 | 111 | 1995 |
| Integrated RF components in a SiGe bipolar technology JN Burghartz, M Soyuer, KA Jenkins, M Kies, M Dolan, KJ Stein, ... IEEE Journal of Solid-State Circuits 32 (9), 1440-1445, 1997 | 99 | 1997 |
| Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates JN Burghartz, DC Edelstein, KA Jenkins, C Jahnes, C Uzoh, EJ O'Sullivan, ... International Electron Devices Meeting. Technical Digest, 99-102, 1996 | 98 | 1996 |
| A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator M Soyuer, KA Jenkins, JN Burghartz, MD Hulvey IEEE Journal of Solid-State Circuits 31 (12), 2042-2045, 1996 | 98 | 1996 |
| A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications JO Plouchart, H Ainspan, M Soyuer, A Ruehli 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of …, 2000 | 95 | 2000 |
| High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier JN Burghartz, M Soyuer, KA Jenkins, MD Hulvey Proceedings of International Electron Devices Meeting, 1015-1018, 1995 | 93 | 1995 |
| Two-level spiral inductor structure having a high inductance to area ratio JN Burghartz, KA Jenkins, S Ponnapalli, M Soyuer US Patent 5,656,849, 1997 | 89 | 1997 |
| A fully monolithic 1.25 GHz CMOS frequency synthesizer M Soyuer, JF Ewen, HL Chuang Proceedings of 1994 IEEE Symposium on VLSI Circuits, 127-128, 1994 | 86 | 1994 |
| Novel substrate contact structure for high-Q silicon-integrated spiral inductors JN Burghartz, AE Ruehli, KA Jenkins, M Soyuer, D Nguyen-Ngoc International Electron Devices Meeting. IEDM Technical Digest, 55-58, 1997 | 81 | 1997 |
| SiGe BiCMOS 3.3-V clock and data recovery circuits for 10-Gb/s serial transmission systems M Meghelli, B Parker, H Ainspan, M Soyuer IEEE Journal of Solid-State Circuits 35 (12), 1992-1995, 2000 | 79 | 2000 |
| Fabricating a semiconductor chip with backside optical vias FE Doany, CV Jahnes, CL Schow, M Soyuer, AV Rylyakov US Patent 8,399,292, 2013 | 76 | 2013 |
| SiGe power HBT's for low-voltage, high-performance RF applications JN Burghartz, JO Plouchart, KA Jenkins, CS Webster, M Soyuer IEEE Electron Device Letters 19 (4), 103-105, 1998 | 72 | 1998 |
