Steffen Breuer

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Martin SchellInstitute Head, Fraunhofer HHI, Berlin, GermanyVerified email at hhi.fraunhofer.de
Simon NellenFraunhofer HHIVerified email at hhi.fraunhofer.de
Björn GlobischEagleyard Photonics GmbHVerified email at toptica-eagleyard.com
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Chennupati JagadishAustralian National UniversityVerified email at anu.edu.au
Milan DeumerFraunhofer Heinrich Hertz InstituteVerified email at hhi.fraunhofer.de
H Hoe TanProfessor, The Australian National UniversityVerified email at anu.edu.au
Jennifer Wong-LeungAssociate Professor, Australian National UniversityVerified email at anu.edu.au
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Maria HilseThe Pennsylvania State UniversityVerified email at psu.edu
Qiang (Michael) GaoFellow, Dept Electronic Materials Engineering, The Australian National UniversityVerified email at anu.edu.au
Carsten PfüllerPost Doc, Paul-Drude-InstitutVerified email at pdi-berlin.de
Ullrich PietschProfessor of solid state physics, University of SiegenVerified email at physik.uni-siegen.de
Patrick ParkinsonUniversity of ManchesterVerified email at manchester.ac.uk
W. Ted MasselinkHumboldt University BerlinVerified email at physik.hu-berlin.de
Nian JiangDepartment of Electronic Materials EngineeringVerified email at anu.edu.au
Jonas LähnemannWissenschaftlicher Mitarbeiter, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Lan FUProfessor, The Australian National UniversityVerified email at anu.edu.au
Rudiger (Rüdiger) QuayFraunhofer IAF, Albert Ludwigs Universität FreiburgVerified email at ieee.org

Steffen Breuer

Epitaxy Scientist, Fraunhofer HHI, Berlin

Verified email at hhi.fraunhofer.de - Homepage

III-V Semiconductor Epitaxy GaN Electronics InP Optoelectronics Terahertz Photoconductors Quantum Dot Comb Lasers


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Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011	250	2011
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012	148	2012
Enhanced minority carrier lifetimes in GaAs/AlGaAs core–shell nanowires through shell growth optimization N Jiang, Q Gao, P Parkinson, J Wong-Leung, S Mokkapati, S Breuer, ... Nano letters 13 (11), 5135-5140, 2013	123	2013
Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011	120	2011
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1− xAs core-shell nanowires N Jiang, P Parkinson, Q Gao, S Breuer, HH Tan, J Wong-Leung, ... Applied Physics Letters 101 (2), 2012	116	2012
Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth L Liebermeister, S Nellen, RB Kohlhaas, S Lauck, M Deumer, S Breuer, ... Nature Communications 12 (1), 1071, 2021	111	2021
Incorporation of the dopants Si and Be into GaAs nanowires M Hilse, M Ramsteiner, S Breuer, L Geelhaar, H Riechert Applied Physics Letters 96 (19), 2010	107	2010
Twinning superlattice formation in GaAs nanowires T Burgess, S Breuer, P Caroff, J Wong-Leung, Q Gao, H Hoe Tan, ... ACS nano 7 (9), 8105-8114, 2013	103	2013
Band gap of wurtzite GaAs: A resonant Raman study P Kusch, S Breuer, M Ramsteiner, L Geelhaar, H Riechert, S Reich Physical Review B—Condensed Matter and Materials Physics 86 (7), 075317, 2012	93	2012
637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs RB Kohlhaas, S Breuer, L Liebermeister, S Nellen, M Deumer, M Schell, ... Applied Physics Letters 117 (13), 2020	83	2020
Acoustically driven photon antibunching in nanowires A Hernández-Mínguez, M Möller, S Breuer, C Pfüller, C Somaschini, ... Nano letters 12 (1), 252-258, 2012	68	2012
Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs RB Kohlhaas, S Breuer, S Nellen, L Liebermeister, M Schell, MP Semtsiv, ... Applied Physics Letters 114 (22), 2019	66	2019
Ultra-fast, high-bandwidth coherent cw THz spectrometer for non-destructive testing L Liebermeister, S Nellen, R Kohlhaas, S Breuer, M Schell, B Globisch Journal of Infrared, Millimeter, and Terahertz Waves 40, 288-296, 2019	66	2019
Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy M Hilse, Y Takagaki, J Herfort, M Ramsteiner, C Herrmann, S Breuer, ... Applied Physics Letters 95 (13), 2009	50	2009
Vapor-liquid-solid nucleation of GaAs on Si (111): Growth evolution from traces to nanowires S Breuer, M Hilse, A Trampert, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 82 (7), 075406, 2010	48	2010
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics P Parkinson, YH Lee, L Fu, S Breuer, HH Tan, C Jagadish Nano letters 13 (4), 1405-1409, 2013	45	2013
Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire A Senichev, P Corfdir, O Brandt, M Ramsteiner, S Breuer, J Schilling, ... Nano Research 11, 4708-4721, 2018	42	2018
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111) A Biermanns, S Breuer, A Trampert, A Davydok, L Geelhaar, U Pietsch Nanotechnology 23 (30), 305703, 2012	42	2012
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution BJ Godejohann, E Ture, S Müller, M Prescher, L Kirste, R Aidam, ... physica status solidi (b) 254 (8), 1600715, 2017	39	2017
Continuous wave terahertz receivers with 4.5 THz bandwidth and 112 dB dynamic range M Deumer, S Breuer, R Kohlhaas, S Nellen, L Liebermeister, S Lauck, ... Optics Express 29 (25), 41819-41826, 2021	38	2021

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