| The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN AF Wright, U Grossner Applied physics letters 73 (19), 2751-2753, 1998 | 260 | 1998 |
| Dynamics and polarization of group-III nitride lattices: A first-principles study F Bechstedt, U Grossner, J Furthmüller Physical Review B 62 (12), 8003, 2000 | 159 | 2000 |
| Structural and morphological properties of ZnO: Ga thin films V Khranovskyy, U Grossner, O Nilsen, V Lazorenko, GV Lashkarev, ... Thin Solid Films 515 (2), 472-476, 2006 | 136 | 2006 |
| Coulomb correlation effects in zinc monochalcogenides SZ Karazhanov, P Ravindran, A Kjekshus, H Fjellvåg, U Grossner, ... Journal of applied physics 100 (4), 2006 | 110 | 2006 |
| Palladium Schottky barrier contacts to hydrothermally grown n-ZnOand shallow electron states U Grossner, S Gabrielsen, TM Børseth, J Grillenberger, AY Kuznetsov, ... Applied physics letters 85 (12), 2259-2261, 2004 | 91 | 2004 |
| Electronic structure and band parameters for ZnX (X= O, S, Se, Te) SZ Karazhanov, P Ravindran, A Kjekhus, H Fjellvåg, U Grossner, ... Journal of Crystal Growth 287 (1), 162-168, 2006 | 84 | 2006 |
| Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO R Schifano, EV Monakhov, U Grossner, BG Svensson Applied Physics Letters 91 (19), 2007 | 81 | 2007 |
| Bond-rotation versus bond-contraction relaxation of (110) surfaces of group-III nitrides U Grossner, J Furthmüller, F Bechstedt Physical Review B 58 (4), R1722, 1998 | 80 | 1998 |
| PEMOCVD of ZnO thin films, doped by Ga and some of their properties V Khranovskyy, U Grossner, V Lazorenko, G Lashkarev, BG Svensson, ... Superlattices and Microstructures 39 (1-4), 275-281, 2006 | 79 | 2006 |
| Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions A Tsibizov, I Kovačević-Badstübner, B Kakarla, U Grossner IEEE Transactions on Power Electronics 35 (2), 1855-1865, 2019 | 74 | 2019 |
| Electrical charge state identification and control for the silicon vacancy in 4H-SiC ME Bathen, A Galeckas, J Müting, HM Ayedh, U Grossner, J Coutinho, ... npj Quantum Information 5 (1), 111, 2019 | 63 | 2019 |
| Electrical properties of Al2O3∕ 4H‐SiC structures grown by atomic layer chemical vapor deposition M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti, ... Journal of Applied Physics 102 (5), 2007 | 55 | 2007 |
| Improvement of ZnO thin film properties by application of ZnO buffer layers V Khranovskyy, R Minikayev, S Trushkin, G Lashkarev, V Lazorenko, ... Journal of Crystal Growth 308 (1), 93-98, 2007 | 50 | 2007 |
| Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs C Martinella, T Ziemann, R Stark, A Tsibizov, KO Voss, RG Alia, Y Kadi, ... IEEE Transactions on Nuclear Science 67 (7), 1381-1389, 2020 | 45 | 2020 |
| Parasitic extraction procedures for SiC power modules I Kovacevic-Badstuebner, R Stark, U Grossner, M Guacci, JW Kolar CIPS 2018; 10th International Conference on Integrated Power Electronics …, 2018 | 44 | 2018 |
| Analysis and design of a 1200 V All-SiC planar interconnection power module for next generation more electrical aircraft power electronic building blocks M Guacci, D Bortis, IF Kovačević-Badstübner, U Grossner, JW Kolar CPSS Transactions on Power Electronics and Applications 2 (4), 320-330, 2017 | 43 | 2017 |
| Conductivity increase of ZnO: Ga films by rapid thermal annealing V Khranovskyy, U Grossner, V Lazorenko, G Lashkarev, BG Svensson, ... Superlattices and Microstructures 42 (1-6), 379-386, 2007 | 42 | 2007 |
| Impact of terrestrial neutrons on the reliability of SiC VD-MOSFET technologies C Martinella, RG Alía, R Stark, A Coronetti, C Cazzaniga, M Kastriotou, ... IEEE Transactions on Nuclear Science 68 (5), 634-641, 2021 | 37 | 2021 |
| Current transport mechanism for heavy-ion degraded SiC MOSFETs C Martinella, R Stark, T Ziemann, RG Alía, Y Kadi, U Grossner, ... IEEE Transactions on Nuclear Science 66 (7), 1702-1709, 2019 | 37 | 2019 |
| Power cycling of commercial SiC MOSFETs T Ziemann, U Grossner, J Neuenschwander 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 36 | 2018 |
Ivana Kovacevic-BadstuebnerAdvanced Power Semiconductor Laboratory, ETH ZurichBestätigte E-Mail-Adresse bei aps.ee.ethz.ch
