Andreas Hangleiter
Andreas Hangleiter
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Zitiert von
Zitiert von
Reduction of oscillator strength due to piezoelectric fields in quantum wells
JS Im, H Kollmer, J Off, A Sohmer, F Scholz, A Hangleiter
Physical Review B 57 (16), R9435, 1998
Suppression of Nonradiative Recombination by V-Shaped Pits in Quantum Wells Produces a Large Increase in the Light Emission Efficiency
A Hangleiter, F Hitzel, C Netzel, D Fuhrmann, U Rossow, G Ade, P Hinze
Physical review letters 95 (12), 127402, 2005
Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
JS Im, A Moritz, F Steuber, V Härle, F Scholz, A Hangleiter
Applied physics letters 70 (5), 631-633, 1997
Enhancement of band-to-band Auger recombination by electron-hole correlations
A Hangleiter, R Häcker
Physical Review Letters 65 (2), 215, 1990
The role of piezoelectric fields in GaN-based quantum wells
A Hangleiter, JS Im, H Kollmer, S Heppel, J Off, F Scholz
Materials Research Society Internet Journal of Nitride Semiconductor …, 1998
Intrinsic upper limits of the carrier lifetime in silicon
R Häcker, A Hangleiter
Journal of Applied Physics 75 (11), 7570-7572, 1994
Nonradiative recombination via deep impurity levels in silicon: Experiment
A Hangleiter
Physical Review B 35 (17), 9149, 1987
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
WG Scheibenzuber, UT Schwarz, RG Veprek, B Witzigmann, A Hangleiter
Physical Review B 80 (11), 115320, 2009
Auger recombination in bulk and quantum well InGaAs
S Hausser, G Fuchs, A Hangleiter, K Streubel, WT Tsang
Applied physics letters 56 (10), 913-915, 1990
Composition dependence of polarization fields in GaInN/GaN quantum wells
A Hangleiter, F Hitzel, S Lahmann, U Rossow
Applied physics letters 83 (6), 1169-1171, 2003
Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures
T Langer, A Kruse, FA Ketzer, A Schwiegel, L Hoffmann, H Jönen, ...
physica status solidi c 8 (7‐8), 2170-2172, 2011
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers
G Fuchs, C Schiedel, A Hangleiter, V Härle, F Scholz
Applied physics letters 62 (4), 396-398, 1993
Influence of barrier height on carrier lifetime in Ga 1− y In y P/(Al x Ga 1− x) 1− y In y P single quantum wells
P Michler, A Hangleiter, M Moser, M Geiger, F Scholz
Physical Review B 46 (11), 7280, 1992
Optical gain in GaInN/GaN heterostructures
G Frankowsky, F Steuber, V Härle, F Scholz, A Hangleiter
Applied physics letters 68 (26), 3746-3748, 1996
Towards understanding the emission efficiency of nitride quantum wells
A Hangleiter, D Fuhrmann, M Grewe, F Hitzel, G Klewer, S Lahmann, ...
physica status solidi (a) 201 (12), 2808-2813, 2004
Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures
G Fuchs, J Hörer, A Hangleiter, V Härle, F Scholz, RW Glew, L Goldstein
Applied physics letters 60 (2), 231-233, 1992
Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism
A Hangleiter
Physical Review B 37 (5), 2594, 1988
Intra-and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
H Kollmer, JS Im, S Heppel, J Off, F Scholz, A Hangleiter
Applied physics letters 74 (1), 82-84, 1999
Optical gain and lasing in self‐assembled InP/GaInP quantum dots
A Moritz, R Wirth, A Hangleiter, A Kurtenbach, K Eberl
Applied physics letters 69 (2), 212-214, 1996
On excitation and decay mechanisms of the Yb3+ luminescence in InP
K Thonke, K Pressel, G Bohnert, A Stapor, J Weber, M Moser, A Molassioti, ...
Semiconductor science and technology 5 (11), 1124, 1990
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