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Mike Schwarz
Mike Schwarz
NanoP, THM - University of Applied Sciences
Verified email at ei.thm.de
Title
Cited by
Cited by
Year
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
T Holtij, M Schwarz, A Kloes, B Iniguez
Solid-state electronics 90, 107-115, 2013
542013
: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs
A Kloes, M Schwarz, T Holtij
IEEE transactions on electron devices 59 (2), 349-358, 2012
392012
2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage
T Holtij, M Schwarz, A Kloes, B Iñíguez
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
362012
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
M Schwarz, T Holtij, A Kloes, B Iñíguez
Solid-State Electronics 69, 72-84, 2012
302012
2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET
M Schwarz, M Weidemann, A Kloes, B Iñíguez
Solid-State Electronics 54 (11), 1372-1380, 2010
302010
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
M Schwarz, T Holtij, A Kloes, B Iñíguez
Solid-State Electronics 63 (1), 119-129, 2011
222011
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes
IEEE Transactions on Electron Devices 64 (9), 3808 - 3815, 2017
202017
Quantum Confinement and Volume Inversion inModel for Short-Channel Tri-Gate MOSFETs
A Kloes, M Schwarz, T Holtij, A Navas
IEEE transactions on electron devices 60 (8), 2691-2694, 2013
162013
Analytical current equation for short channel SOI multigate FETs including 3D effects
A Kloes, M Weidemann, M Schwarz
Solid-state electronics 54 (11), 1408-1415, 2010
142010
The future is MEMS design considerations of microelectromechanical systems at Bosch
M Schwarz, J Franz, M Reimann
2015 22nd International Conference Mixed Design of Integrated Circuits …, 2015
122015
2D analytical framework for compact modeling of the electrostatics in undoped dg mosfets
M Schwarz, T Holtij, A Kloes, B Iñíguez
Proceedings of the 18th International Conference Mixed Design of Integrated …, 2011
122011
Analysis and Performance Study of III-V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model
M Schwarz, A Kloes
IEEE Transactions on Electron Devices 63 (7), 2757 - 2763, 2016
112016
2D analytical calculation of the parasitic source/drain resistances in DG-MOSFETs using the conformal mapping technique
T Holtij, M Schwarz, A Kloes, B Iñíguez
IETE Journal of Research 58 (3), 205-213, 2012
102012
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
M Schwarz, T Holtij, A Kloes, B Iñíguez
Solid-state electronics 82, 86-98, 2013
92013
Model for investigation of Ion/Ioffratios in short-channel junctionless double gate MOSFETs
T Holtij, M Schwarz, M Graef, F Hain, A Kloes, B Iñíguez
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
82013
Performance study of a Schottky barrier double-gate MOSFET using a two-dimensional analytical model
M Schwarz, T Holtij, A Kloes, B Iniguez
IEEE transactions on electron devices 60 (2), 884-886, 2013
72013
2D analytical modeling of the potential within juntionless DG MOSFETs in the subthreshold regime
T Holtij, M Schwarz, A Kloes, B Iñíguez
EUROSOI, 2012
72012
Method and control unit for activating at least one safety device
M Hiemer, M Schwarz
US Patent US20110153164 A1, 2011
72011
Analytical 2D model for the channel electric field in undoped Schottky barrier double-gate MOSFET
M Schwarz, A Kloes, B Iñíguez
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
72010
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
A Farokhnejad, M Schwarz, F Horst, B Iniguez, F Lime, A Kloes
Solid-State Electronics 159, 191-196, 2019
62019
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Articles 1–20