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Mike Schwarz
Mike Schwarz
NanoP, THM - University of Applied Sciences
Verified email at ei.thm.de
Title
Cited by
Cited by
Year
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
T Holtij, M Schwarz, A Kloes, B Iniguez
Solid-state electronics 90, 107-115, 2013
612013
2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage
T Holtij, M Schwarz, A Kloes, B Iñíguez
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
432012
: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs
A Kloes, M Schwarz, T Holtij
IEEE transactions on electron devices 59 (2), 349-358, 2012
412012
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes
IEEE Transactions on Electron Devices 64 (9), 3808 - 3815, 2017
342017
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
M Schwarz, T Holtij, A Kloes, B Iniguez
Solid-State Electronics 69, 72-84, 2012
342012
2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET
M Schwarz, M Weidemann, A Kloes, B Iñíguez
Solid-State Electronics 54 (11), 1372-1380, 2010
312010
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
M Schwarz, T Holtij, A Kloes, B Iñíguez
Solid-State Electronics 63 (1), 119-129, 2011
232011
Analysis and Performance Study of III-V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model
M Schwarz, A Kloes
IEEE Transactions on Electron Devices 63 (7), 2757 - 2763, 2016
182016
Quantum Confinement and Volume Inversion inModel for Short-Channel Tri-Gate MOSFETs
A Kloes, M Schwarz, T Holtij, A Navas
IEEE transactions on electron devices 60 (8), 2691-2694, 2013
162013
The future is MEMS design considerations of microelectromechanical systems at Bosch
M Schwarz, J Franz, M Reimann
2015 22nd International Conference Mixed Design of Integrated Circuits …, 2015
152015
Analytical current equation for short channel SOI multigate FETs including 3D effects
A Kloes, M Weidemann, M Schwarz
Solid-state electronics 54 (11), 1408-1415, 2010
152010
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
C Roemer, G Darbandy, M Schwarz, J Trommer, A Heinzig, T Mikolajick, ...
IEEE Journal of the Electron Devices Society 10, 416 - 423, 2021
122021
2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs
M Schwarz, T Holtij, A Kloes, B Iñíguez
Proceedings of the 18th International Conference Mixed Design of Integrated …, 2011
122011
The Schottky barrier transistor in emerging electronic devices
M Schwarz, TD Vethaak, V Derycke, A Francheteau, B Iniguez, S Kataria, ...
Nanotechnology 34 352002, 2023
112023
A Comprehensive Physics-Based Current-Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs
SA Ahsan, SK Singh, C Yadav, EG Marín, A Kloes, M Schwarz
IEEE Transactions on Electron Devices 67 (11), 2020
112020
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
M Schwarz, T Holtij, A Kloes, B Iniguez
Solid-state electronics 82, 86-98, 2013
112013
2D analytical calculation of the parasitic source/drain resistances in DG-MOSFETs using the conformal mapping technique
T Holtij, M Schwarz, A Kloes, B Iñíguez
IETE Journal of Research 58 (3), 205-213, 2012
102012
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
A Farokhnejad, M Schwarz, F Horst, B Iñíguez, F Lime, A Kloes
Solid-State Electronics 159, 191-196, 2019
82019
Model for investigation of Ion/Ioffratios in short-channel junctionless double gate MOSFETs
T Holtij, M Schwarz, M Graef, F Hain, A Kloes, B Iñíguez
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
82013
Method and control unit for activating at least one safety device
M Hiemer, M Schwarz
US Patent US20110153164 A1, 2011
82011
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Articles 1–20