Daniel Hägele
Daniel Hägele
Professor of Experimental Physics, Ruhr University Bochum
Bestätigte E-Mail-Adresse bei rub.de
Zitiert von
Zitiert von
Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas
RA Kaindl, MA Carnahan, D Hägele, R Lövenich, DS Chemla
Nature 423 (6941), 734-738, 2003
Spin transport in GaAs
D Hägele, M Oestreich, WW Rühle, N Nestle, K Eberl
Applied physics letters 73 (11), 1580-1582, 1998
Spin injection into semiconductors
M Oestreich, J Hübner, D Hägele, PJ Klar, W Heimbrodt, WW Rühle, ...
Applied physics letters 74 (9), 1251-1253, 1999
Laser threshold reduction in a spintronic device
J Rudolph, D Hägele, HM Gibbs, G Khitrova, M Oestreich
Applied Physics Letters 82 (25), 4516-4518, 2003
Spin noise spectroscopy in GaAs
M Oestreich, M Römer, RJ Haug, D Hägele
Physical review letters 95 (21), 216603, 2005
Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects
S Döhrmann, D Hägele, J Rudolph, M Bichler, D Schuh, M Oestreich
Physical review letters 93 (14), 147405, 2004
Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases
RA Kaindl, D Hägele, MA Carnahan, DS Chemla
Physical Review B 79 (4), 045320, 2009
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
J Rudolph, S Döhrmann, D Hägele, M Oestreich, W Stolz
Applied Physics Letters 87 (24), 241117, 2005
Optical orientation of electron spins in GaAs quantum wells
S Pfalz, R Winkler, T Nowitzki, D Reuter, AD Wieck, D Hägele, ...
Physical Review B 71 (16), 165305, 2005
Spin injection, spin transport and spin coherence
M Oestreich, M Bender, J Hübner, D Hägele, WW Rühle, T Hartmann, ...
Semiconductor science and technology 17 (4), 285, 2002
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
VV Bel'kov, SD Ganichev, P Schneider, C Back, M Oestreich, J Rudolph, ...
Solid state communications 128 (8), 283-286, 2003
Temperature dependence of electron spin relaxation in bulk GaN
JH Buß, J Rudolph, F Natali, F Semond, D Hägele
Physical Review B 81 (15), 155216, 2010
Spintronics: Spin electronics and optoelectronics in semiconductors
M Oestreich, J Hübner, D Hägele, M Bender, N Gerhardt, M Hofmann, ...
Advances in Solid State Physics, 173-186, 2001
Temperature-dependent electron Landé factor and the interband matrix element of GaAs
J Hübner, S Döhrmann, D Hägele, M Oestreich
Physical Review B 79 (19), 193307, 2009
Anisotropic electron spin relaxation in bulk GaN
JH Buss, J Rudolph, F Natali, F Semond, D Hägele
Applied Physics Letters 95 (19), 192107, 2009
Ultrafast spin noise spectroscopy
S Starosielec, D Hägele
Applied Physics Letters 93 (5), 051116, 2008
Long room-temperature electron spin lifetimes in highly doped cubic GaN
JH Buß, J Rudolph, T Schupp, DJ As, K Lischka, D Hägele
Applied Physics Letters 97 (6), 062101, 2010
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the nondegenerate to the highly degenerate regime
JH Buß, J Rudolph, S Starosielec, A Schaefer, F Semond, Y Cordier, ...
Physical Review B 84 (15), 153202, 2011
Design considerations for semiconductor spin lasers
M Oestreich, J Rudolph, R Winkler, D Hägele
Superlattices and Microstructures 37 (5), 306-312, 2005
Discrete-time windows with minimal RMS bandwidth for given RMS temporal width
S Starosielec, D Hägele
Signal processing 102, 240-246, 2014
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