Joan Redwing
Joan Redwing
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Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
In situ epitaxial MgB2 thin films for superconducting electronics
X Zeng, AV Pogrebnyakov, A Kotcharov, JE Jones, XX Xi, EM Lysczek, ...
Nature materials 1 (1), 35-38, 2002
Piezoelectric charge densities in AlGaN/GaN HFETs
PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
Bottom-up assembly of large-area nanowire resonator arrays
M Li, RB Bhiladvala, TJ Morrow, JA Sioss, KK Lew, JM Redwing, ...
Nature nanotechnology 3 (2), 88-92, 2008
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
GaN-based devices using (Ga, AL, In) N base layers
RP Vaudo, JM Redwing, MA Tischler, DW Brown
US Patent 6,156,581, 2000
High-field superconductivity in alloyed thin films
V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B 71 (1), 012504, 2005
Crystallographic wet chemical etching of GaN
DA Stocker, EF Schubert, JM Redwing
Applied Physics Letters 73 (18), 2654-2656, 1998
High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
J Redwing, MA Tischler
US Patent 5,874,747, 1999
Silicon nanowire array photoelectrochemical cells
AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
III-V nitride substrate boule and method of making and using the same
RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler
US Patent 6,596,079, 2003
Optical properties of Si-doped GaN
EF Schubert, ID Goepfert, W Grieshaber, JM Redwing
Applied Physics Letters 71 (7), 921-923, 1997
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates
KK Lew, JM Redwing
Journal of Crystal Growth 254 (1-2), 14-22, 2003
AIGaN/GaN HEMTs grown on SIC substrates
SC Binari, JM Redwing, G Keiner, W Kruppa
Electronics Letters 33 (3), 242-243, 1997
Optical properties of rectangular cross-sectional ZnS nanowires
Q Xiong, G Chen, JD Acord, X Liu, JJ Zengel, HR Gutierrez, JM Redwing, ...
Nano Letters 4 (9), 1663-1668, 2004
High voltage (450 V) GaN schottky rectifiers
ZZ Bandić, PM Bridger, EC Piquette, TC McGill, RP Vaudo, VM Phanse, ...
Applied physics letters 74 (9), 1266-1268, 1999
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
Nanometer‐scale modification and welding of silicon and metallic nanowires with a high‐intensity electron beam
S Xu, M Tian, J Wang, J Xu, JM Redwing, MHW Chan
Small 1 (12), 1221-1229, 2005
Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor–Liquid–Solid Si/Si1−xGex Heterostructure Nanowires
TE Clark, P Nimmatoori, KK Lew, L Pan, JM Redwing, EC Dickey
Nano letters 8 (4), 1246-1252, 2008
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
D Qiao, LS Yu, SS Lau, JM Redwing, JY Lin, HX Jiang
Journal of Applied Physics 87 (2), 801-804, 2000
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