Francisco Jiménez-Molinos
Francisco Jiménez-Molinos
Bestätigte E-Mail-Adresse bei ugr.es - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gamiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
1152001
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
872002
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
822002
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
592014
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suńé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 144505, 2013
572013
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 122108, 2006
452006
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
392015
A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan
IEEE, 2015
392015
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
382017
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
382010
A new compact model for bipolar rrams based on truncated-cone conductive filaments—a verilog-a approach
G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suńé, S Long, ...
Semiconductor Science and Technology 31 (11), 115013, 2016
372016
S I M 2 R R A M : a physical model for RRAM …
MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suńé, M Lanza
Journal of Computational Electronics 16 (4), 1095-1120, 2017
362017
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
362017
A comprehensive analysis on progressive reset transitions in RRAMs
MA Villena, JB Roldán, F Jimenez-Molinos, J Suńé, S Long, E Miranda, ...
Journal of Physics D: Applied Physics 47 (20), 205102, 2014
322014
Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
F Gamiz, F Jimenez-Molinos, JB Roldan, P Cartujo-Cassinello
Applied physics letters 80 (20), 3835-3837, 2002
312002
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
302016
Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors
R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ...
arXiv preprint arXiv:1702.01533, 2017
292017
Hole transport in DGSOI devices: Orientation and silicon thickness effects
L Donetti, F Gámiz, N Rodrı, F Jiménez-Molinos, JB Roldán
Solid-state electronics 54 (2), 191-195, 2010
222010
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
212019
Coulomb scattering in high- gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
F Jiménez-Molinos, F Gámiz, L Donetti
Journal of Applied Physics 104 (6), 063704, 2008
152008
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20