Low dielectric constant materials for microelectronics K Maex, MR Baklanov, D Shamiryan, F Lacopi, SH Brongersma, ...
Journal of Applied Physics 93 (11), 8793-8841, 2003
1952 2003 Low-k dielectric materials D Shamiryan, T Abell, F Iacopi, K Maex
Materials today 7 (1), 34-39, 2004
467 2004 Fabrication of porogen residues free and mechanically robust low-k materials AM Urbanowicz, P Verdonck, D Shamiryan, K Vanstreels, M Baklanov, ...
US Patent App. 12/831,935, 2011
432 2011 Plasma processing of low-k dielectrics MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ...
Journal of Applied Physics 113 (4), 2013
351 2013 Plasma for patterning advanced gate stacks D Shamiryan, V Paraschiv, M Demand, W Boullart
US Patent App. 11/544,351, 2007
203 2007 Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma D Shamiryan, MR Baklanov, S Vanhaelemeersch, K Maex
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
197 2002 F. lacopi, SH Brongersma, and ZS Yanovitskaya K Maex, MR Baklanov, D Shamiryan
J. Appl. Phys 93 (11), 8793, 2003
146 2003 Record ION /IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
145 2008 Characterization of Cu surface cleaning by hydrogen plasma MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
113 2001 Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening AM Urbanowicz, K Vanstreels, P Verdonck, D Shamiryan, S De Gendt, ...
Journal of Applied Physics 107 (10), 2010
97 2010 The removal of copper oxides by ethyl alcohol monitored in situ by spectroscopic ellipsometry A Satta, D Shamiryan, MR Baklanov, CM Whelan, QT Le, GP Beyer, ...
Journal of The Electrochemical Society 150 (5), G300, 2003
85 2003 25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/in the source and drain regions P Verheyen, N Collaert, R Rooyackers, R Loo, D Shamiryan, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 194-195, 2005
66 2005 Effect of porogen residue on chemical, optical, and mechanical properties of CVD SiCOH low-k materials AM Urbanowicz, K Vanstreels, D Shamiryan, S De Gendt, MR Baklanov
Electrochemical and Solid-State Letters 12 (8), H292, 2009
64 2009 High performance 70-nm germanium pMOSFETs with boron LDD implants G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ...
IEEE Electron Device Letters 30 (1), 88-90, 2008
61 2008 Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films F Iacopi, Z Tőkei, QT Le, D Shamiryan, T Conard, B Brijs, U Kreissig, ...
Journal of applied physics 92 (3), 1548-1554, 2002
61 2002 Growth and characterization of atomic layer deposited on polymer films AM Hoyas, J Schuhmacher, D Shamiryan, J Waeterloos, W Besling, ...
Journal of applied physics 95 (1), 381-388, 2004
55 2004 Diffusion barrier integrity evaluation by ellipsometric porosimetry D Shamiryan, MR Baklanov, K Maex
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
55 2003 Effects of various plasma pretreatments on 193nm photoresist and linewidth roughness after etching MC Kim, D Shamiryan, Y Jung, W Boullart, CJ Kang, HK Cho
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
53 2006 Investigation of barrier and slurry effects on the galvanic corrosion of copper D Ernur, S Kondo, D Shamiryan, K Maex
Microelectronic Engineering 64 (1-4), 117-124, 2002
53 2002 Strain Enhanced nMOS Using In Situ Doped Embedded S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition … P Verheyen, V Machkaoutsan, M Bauer, D Weeks, C Kerner, F Clemente, ...
IEEE Electron Device Letters 29 (11), 1206-1208, 2008
48 2008