| Surface passivation of GaN nanowires for enhanced photoelectrochemical water-splitting P Varadhan, HC Fu, D Priante, JRD Retamal, C Zhao, M Ebaid, TK Ng, ... Nano letters 17 (3), 1520-1528, 2017 | 203 | 2017 |
| Extremely reduced dielectric confinement in two-dimensional hybrid perovskites with large polar organics B Cheng, TY Li, P Maity, PC Wei, D Nordlund, KT Ho, DH Lien, CH Lin, ... Communications Physics 1 (1), 80, 2018 | 155 | 2018 |
| Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics C Zhao, TK Ng, RT ElAfandy, A Prabaswara, GB Consiglio, IA Ajia, ... Nano letters 16 (7), 4616-4623, 2016 | 119 | 2016 |
| A photodetector based on p-Si/n-ZnO nanotube heterojunctions with high ultraviolet responsivity TH Flemban, MA Haque, I Ajia, N Alwadai, S Mitra, T Wu, IS Roqan ACS applied materials & interfaces 9 (42), 37120-37127, 2017 | 91 | 2017 |
| High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation S Mitra, A Aravindh, G Das, Y Pak, I Ajia, K Loganathan, E Di Fabrizio, ... Nano Energy 48, 551-559, 2018 | 83 | 2018 |
| Double charged surface layers in lead halide perovskite crystals SP Sarmah, VM Burlakov, E Yengel, B Murali, E Alarousu, AM El-Zohry, ... Nano Letters 17 (3), 2021-2027, 2017 | 73 | 2017 |
| Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode IA Ajia, PR Edwards, Y Pak, E Belekov, MA Roldan, N Wei, Z Liu, ... ACS Photonics 5 (3), 820-826, 2017 | 69 | 2017 |
| Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires N Alfaraj, S Mitra, F Wu, IA Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ... Applied Physics Letters 110 (16), 2017 | 66 | 2017 |
| Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at~ 350 nm via step quantum well structure design F Wu, H Sun, IA AJia, IS Roqan, D Zhang, J Dai, C Chen, ZC Feng, X Li Journal of Physics D: Applied Physics 50 (24), 245101, 2017 | 61 | 2017 |
| High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer MM Muhammed, MA Roldan, Y Yamashita, SL Sahonta, IA Ajia, K Iizuka, ... Scientific reports 6 (1), 29747, 2016 | 60 | 2016 |
| GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices IA Ajia, Y Yamashita, K Lorenz, MM Muhammed, L Spasevski, D Almalawi, ... Applied Physics Letters 113 (8), 2018 | 52 | 2018 |
| Excitonic localization in AlN-rich AlxGa1− xN/AlyGa1− yN multi-quantum-well grain boundaries IA Ajia, PR Edwards, Z Liu, JC Yan, RW Martin, IS Roqan Applied Physics Letters 105 (12), 2014 | 39 | 2014 |
| Catalyst-free vertical ZnO-nanotube array grown on p-GaN for UV-light-emitting devices N Alwadai, IA Ajia, B Janjua, TH Flemban, S Mitra, N Wehbe, N Wei, ... ACS applied materials & interfaces 11 (31), 27989-27996, 2019 | 30 | 2019 |
| Gigahertz nano-optomechanical resonances in a dielectric SiC-membrane metasurface array IA Ajia, JY Ou, NJ Dinsdale, HJ Singh, T Chen-Sverre, T Liu, NI Zheludev, ... Nano Letters 21 (11), 4563-4569, 2021 | 14 | 2021 |
| Subquantum-well influence on carrier dynamics in high efficiency DUV dislocation-free AlGaN/AlGaN-based multiple quantum wells IA Ajia, D Almalawi, Y Lu, S Lopatin, X Li, Z Liu, IS Roqan Acs Photonics 7 (7), 1667-1675, 2020 | 7 | 2020 |
| Time–energy quantum uncertainty: Quantifying the effectiveness of surface defect passivation protocols for low-dimensional semiconductors N Alfaraj, W Alghamdi, M Alawein, IA Ajia, D Priante, B Janjua, H Sun, ... ACS Applied Electronic Materials 2 (2), 409-418, 2020 | 6 | 2020 |
| Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and … RC Subedi, JW Min, S Mitra, KH Li, I Ajia, E Stegenburgs, DH Anjum, ... ACS Applied Materials & Interfaces 12 (37), 41649-41658, 2020 | 5 | 2020 |
| Growth modification via indium surfactant for InGaN/GaN green LED MIM Taib, MA Ahmad, EA Alias, AI Alhassan, IA Ajia, MM Muhammed, ... Semiconductor Science and Technology 38 (3), 035025, 2023 | 4 | 2023 |
| Highly efficient transverse-electric-dominant ultraviolet-C emitters employing GaN multiple quantum disks in AlN nanowire matrix RC Subedi, JW Min, S Mitra, KH Li, I Ajia, E Stegenburgs, DH Anjum, ... Gallium Nitride Materials and Devices XVI 11686, 73-84, 2021 | 1 | 2021 |
| Flexible thin film optical solar reflectors with Ta2O5-based multimaterial coatings for space radiative cooling W Xiao, P Dai, HJ Singh, IA Ajia, X Yan, PR Wiecha, R Huang, ... APL Photonics 8 (9), 2023 | | 2023 |
Iman RoqanKAUSTVerified email at kaust.edu.sa
