Folgen
Koichi Kakimoto
Koichi Kakimoto
Bestätigte E-Mail-Adresse bei riam.kyushu-u.ac.jp - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Crystal growth technology
HJ Scheel, T Fukuda
Wiley, 2003
3282003
Crystal growth processes based on capillarity: Czochralski, floating zone, shaping and crucible techniques
T Duffar
John Wiley & Sons, 2010
1392010
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal
A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ...
Applied Physics Letters 104 (15), 152101, 2014
1352014
Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
L Liu, K Kakimoto
International Journal of Heat and Mass Transfer 48 (21-22), 4481-4491, 2005
1312005
Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells
L Liu, S Nakano, K Kakimoto
Journal of Crystal Growth 310 (7-9), 2192-2197, 2008
1222008
Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 88 (3), 365-370, 1988
1101988
Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket
S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, ...
Journal of Crystal Growth 186 (1-2), 85-94, 1998
1081998
Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substrates
K Kakimoto, T Katoda
Applied Physics Letters 40 (9), 826-828, 1982
941982
Study on thermal stress in a silicon ingot during a unidirectional solidification process
XJ Chen, S Nakano, LJ Liu, K Kakimoto
Journal of Crystal Growth 310 (19), 4330-4335, 2008
912008
Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy
T Katsube, K Kakimoto, T Ikoma
Journal of Applied Physics 52 (5), 3504-3508, 1981
911981
Spoke patterns on molten silicon in Czochralski system
KW Yi, K Kakimoto, M Eguchi, M Watanabe, T Shyo, T Hibiya
Journal of crystal growth 144 (1-2), 20-28, 1994
881994
Natural and forced convection of molten silicon during Czochralski single crystal growth
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 94 (2), 412-420, 1989
881989
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
B Gao, XJ Chen, S Nakano, K Kakimoto
Journal of Crystal Growth 312 (9), 1572-1576, 2010
842010
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino
Applied Physics Letters 103 (11), 112107, 2013
822013
Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model
L Liu, S Nakano, K Kakimoto
Journal of Crystal Growth 292 (2), 515-518, 2006
812006
Crystal growth of Si for solar cells
K Nakajima, N Usami
Springer, 2009
782009
Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell
H Matsuo, RB Ganesh, S Nakano, L Liu, Y Kangawa, K Arafune, ...
Journal of Crystal Growth 310 (22), 4666-4671, 2008
712008
Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields
K Kakimoto, KW Yi, M Eguchi
Journal of crystal growth 163 (3), 238-242, 1996
681996
Flow instability of molten silicon in the Czochralski configuration
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 102 (1-2), 16-20, 1990
601990
Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini
CRC Press, 2014
582014
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20