Max Bügler
Title
Cited by
Cited by
Year
High Si and Ge n-type doping of GaN doping-Limits and impact on stress
S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ...
Applied Physics Letters 100 (12), 122104, 2012
1702012
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B 86 (7), 075207, 2012
672012
Band-gap engineering of zinc oxide colloids via lattice substitution with sulfur leading to materials with advanced properties for optical applications like full inorganic UV …
D Lehr, M Luka, MR Wagner, M Bügler, A Hoffmann, S Polarz
Chemistry of Materials 24 (10), 1771-1778, 2012
432012
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
422015
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ...
Journal of Applied Physics 113 (20), 203513, 2013
402013
Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition
MK Indika Senevirathna, S Gamage, R Atalay, AR Acharya, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (3 …, 2012
152012
Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD
M Buegler, S Gamage, R Atalay, J Wang, MKI Senevirathna, R Kirste, ...
physica status solidi c 8 (7‐8), 2059-2062, 2011
122011
Growth temperature-phase stability relation in In 1-x Ga x N epilayers grown by high-pressure CVD
G Durkaya, M Alevli, M Buegler, R Atalay, S Gamage, M Kaiser, R Kirste, ...
MRS Online Proceedings Library 1202 (1), 120-125, 2009
122009
Optical and structural properties of InN grown by HPCVD
M Buegler, M Alevli, R Atalay, G Durkaya, I Senevirathna, M Jamil, ...
Ninth International Conference on Solid State Lighting 7422, 742218, 2009
112009
The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
G Durkaya, M Buegler, R Atalay, I Senevirathna, M Alevli, O Hitzemann, ...
physica status solidi (a) 207 (6), 1379-1382, 2010
92010
Intrinsic electronic properties of high-quality wurtzite InN
H Eisele, J Schuppang, M Schnedler, M Duchamp, C Nenstiel, V Portz, ...
Physical Review B 94 (24), 245201, 2016
62016
Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
M Buegler, S Gamage, R Atalay, J Wang, I Senevirathna, R Kirste, T Xu, ...
Tenth International Conference on Solid State Lighting 7784, 77840F, 2010
62010
Observation of NH2 species on tilted InN facets
AR Acharya, M Buegler, R Atalay, N Dietz, BD Thoms, JS Tweedie, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (4 …, 2011
42011
Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD
R Atalay, M Buegler, S Gamage, MKI Senevirathna, B Küçükgök, ...
Twelfth International Conference on Solid State Lighting and Fourth …, 2012
32012
Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate
M Dworzak, T Stempel Pereira, M Bügler, A Hoffmann, G Franssen, ...
physica status solidi (RRL)–Rapid Research Letters 1 (4), 141-143, 2007
22007
Optical and structural properties of Indium-Nitride epilayers and their growth by High-Pressure Chemical Vapor Deposition
MJL Bügler
2013
Studies on the crystal distortion -- birefringence relationship in ZnGeP2
R Atalay, M Alevli, M Buegler, G Durkaya, N Dietz
APS March Meeting Abstracts 2010, L25. 015, 2010
2010
Studies on single-phase, indium-rich In1-xGaxN epilayers grown by high-pressure CVD
M Buegler, M Alevli, R Atalay, G Durkaya, J Wang, I Senevirathna, ...
APS March Meeting Abstracts 2010, W25. 001, 2010
2010
Growth of InN and In rich InGaN by``High Pressure Chemical Vapor Deposition''(HPCVD)
M Buegler, M Alevli, R Atalay, G Durkaya, J Wang, I Senevirathna, ...
APS Southeastern Section Meeting Abstracts 76, EC. 001, 2009
2009
Composition and Structure of HPCVD-grown InGaN
A Acharya, M Buegler, G Durkaya, B Thoms, N Dietz
APS Southeastern Section Meeting Abstracts 76, LA. 017, 2009
2009
The system can't perform the operation now. Try again later.
Articles 1–20