| Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi‐quantum‐well lasers Y Jiang, MC Teich, WI Wang Journal of applied physics 69 (10), 6869-6875, 1991 | 62 | 1991 |
| GaSb‐oxide removal and surface passivation using an electron cyclotron resonance hydrogen source Z Lu, Y Jiang, WI Wang, MC Teich, RM Osgood Jr Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 53 | 1992 |
| Forbidden Auger process in strained InGaSb/AlGaSb quantum wells Y Jiang, MC Teich, WI Wang Applied physics letters 57 (27), 2922-2924, 1990 | 28 | 1990 |
| Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells Y Jiang, MC Teich, WI Wang Journal of applied physics 71 (2), 769-772, 1992 | 12 | 1992 |
| Hole impact ionization enhancement in AlxGa1−xSb Y Jiang, MC Teich, WI Wang Journal of applied physics 67 (5), 2488-2493, 1990 | 12 | 1990 |
| The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb Y Jiang, MC Teich, WI Wang Journal of applied physics 69 (2), 836-840, 1991 | 11 | 1991 |
| Auger recombination in HgCdTe quantum wires and quantum boxes Y Jiang, MC Teich, WI Wang, JR Meyer Journal of applied physics 71 (7), 3394-3398, 1992 | 8 | 1992 |
