| Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells G Zerveas, E Caruso, G Baccarani, L Czornomaz, N Daix, D Esseni, ... Solid-State Electronics 115, 92-102, 2016 | 30 | 2016 |
| Impact of strain on tunneling current and threshold voltage in III–V nanowire TFETs M Visciarelli, E Gnani, A Gnudi, S Reggiani, G Baccarani IEEE Electron Device Letters 37 (5), 560-563, 2016 | 27 | 2016 |
| Design guidelines for GaSb/InAs TFET exploiting strain and device size M Visciarelli, E Gnani, A Gnudi, S Reggiani, G Baccarani Solid-State Electronics 129, 157-162, 2017 | 15 | 2017 |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD L Selmi, E Caruso, S Carapezzi, M Visciarelli, E Gnani, N Zagni, P Pavan, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2017 | 13 | 2017 |
| Electron transport properties of diarylethene photoswitches by a simplified NEGF-DFT approach V Barone, I Cacelli, A Ferretti, M Visciarelli The Journal of Physical Chemistry B 118 (18), 4976-4981, 2014 | 11 | 2014 |
| TFET inverter static and transient performances in presence of traps and localized strain E Gnani, M Visciarelli, A Gnudi, S Reggiani, G Baccarani Solid-State Electronics 159, 38-42, 2019 | 10 | 2019 |
| Impact of traps and strain on optimized n-and p-type TFETs integrated on the same InAs/AlGaSb technology platform M Visciarelli, E Gnani, A Gnudi, S Reggiani, G Baccarani IEEE Transactions on Electron Devices 64 (8), 3108-3113, 2017 | 10 | 2017 |
| Modeling the imaginary branch in III–V tunneling devices: Effective mass vs k· p C Alper, M Visciarelli, P Palestri, JL Padilla, A Gnudi, E Gnani, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 8 | 2015 |
| A full-quantum simulation study of InGaAs NW MOSFETs including interface traps M Visciarelli, A Gnudi, E Gnani, S Reggiani 2016 46th European Solid-State Device Research Conference (ESSDERC), 180-183, 2016 | 7 | 2016 |
| Modeling approaches for band-structure calculation in III-V FET quantum wells E Caruso, G Zerveas, G Baccarani, L Czornomaz, N Daix, D Esseni, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 7 | 2015 |
| Theoretical study of a molecular junction with asymmetric current/voltage characteristics V Barone, I Cacelli, A Ferretti, M Visciarelli Chemical Physics Letters 549, 1-5, 2012 | 6 | 2012 |
| Optimization of GaSb/InAs TFET exploiting different strain configurations M Visciarelli, E Gnani, A Gnudi, S Reggiani, G Baccarani 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 4 | 2016 |
| Transport properties of binuclear metal complexes of the VIII group using a simplified NEGF-DFT approach V Barone, I Cacelli, A Ferretti, M Visciarelli Physical Chemistry Chemical Physics 15 (27), 11409-11419, 2013 | 3 | 2013 |
| Investigation of the combined effect of traps and strain on optimized n-and p-type TFETs M Visciarelli, E Gnani, A Gnudi, S Reggiani, G Baccarani 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 1 | 2017 |
| TFET-based inverter performance in the presence of traps and localized strain E Gnani, A Gnudi, S Reggiani, B Baccarani, M Visciarelli 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | | 2018 |
| Full-quantum modeling of III-V Tunnel-FETs architec-tures E Gnani, M Visciarelli, A Gnudi, S Reggiani, G Baccarani | | 2018 |
| Impact of strain and interface traps on the performance of III–V nanowire TFETs E Gnani, M Visciarelli, A Gnudi, S Reggiani, G Baccarani 2016 13th IEEE International Conference on Solid-State and Integrated …, 2016 | | 2016 |
| Modeling transport properties of molecular devices by a novel computational approach M Visciarelli Scuola Normale Superiore, 2014 | | 2014 |
