| One-dimensional steeplechase for electrons realized MT Björk, BJ Ohlsson, T Sass, AI Persson, C Thelander, MH Magnusson, ... Nano Letters 2 (2), 87-89, 2002 | 910 | 2002 |
| Nanowire-based one-dimensional electronics C Thelander, P Agarwal, S Brongersma, J Eymery, LF Feiner, A Forchel, ... Materials today 9 (10), 28-35, 2006 | 816 | 2006 |
| One-dimensional heterostructures in semiconductor nanowhiskers MT Björk, BJ Ohlsson, T Sass, AI Persson, C Thelander, MH Magnusson, ... Applied Physics Letters 80 (6), 1058-1060, 2002 | 777 | 2002 |
| Nanowire resonant tunneling diodes MT Björk, BJ Ohlsson, C Thelander, AI Persson, K Deppert, ... Applied Physics Letters 81 (23), 4458-4460, 2002 | 566 | 2002 |
| Single-electron transistors in heterostructure nanowires C Thelander, T Mårtensson, MT Björk, BJ Ohlsson, MW Larsson, ... Applied Physics Letters 83 (10), 2052-2054, 2003 | 527 | 2003 |
| Few-electron quantum dots in nanowires MT Björk, C Thelander, AE Hansen, LE Jensen, MW Larsson, ... Nano Letters 4 (9), 1621-1625, 2004 | 366 | 2004 |
| Crystal phase engineering in single InAs nanowires KA Dick, C Thelander, L Samuelson, P Caroff Nano letters 10 (9), 3494-3499, 2010 | 262 | 2010 |
| Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots HA Nilsson, P Caroff, C Thelander, M Larsson, JB Wagner, ... Nano letters 9 (9), 3151-3156, 2009 | 252 | 2009 |
| Effects of crystal phase mixing on the electrical properties of InAs nanowires C Thelander, P Caroff, S Plissard, AW Dey, KA Dick Nano letters 11 (6), 2424-2429, 2011 | 242 | 2011 |
| Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate C Thelander, LE FrÖbergFroberg, C Rehnstedt, L Samuelson, ... IEEE Electron Device Letters 29 (3), 206-208, 2008 | 225 | 2008 |
| Semiconductor nanowires for 0D and 1D physics and applications L Samuelson, C Thelander, MT Björk, M Borgström, K Deppert, KA Dick, ... Physica E: Low-dimensional Systems and Nanostructures 25 (2-3), 313-318, 2004 | 223 | 2004 |
| Sulfur passivation for ohmic contact formation to InAs nanowires DB Suyatin, C Thelander, MT Björk, I Maximov, L Samuelson Nanotechnology 18 (10), 105307, 2007 | 207 | 2007 |
| Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures BJ Ohlsson, MT Björk, AI Persson, C Thelander, LR Wallenberg, ... Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 1126-1130, 2002 | 199 | 2002 |
| Nanowire single-electron memory C Thelander, HA Nilsson, LE Jensen, L Samuelson Nano letters 5 (4), 635-638, 2005 | 182 | 2005 |
| Electron transport in InAs nanowires and heterostructure nanowire devices C Thelander, MT Björk, MW Larsson, AE Hansen, LR Wallenberg, ... Solid State Communications 131 (9-10), 573-579, 2004 | 181 | 2004 |
| Spin relaxation in InAs nanowires studied by tunable weak antilocalization AE Hansen, MT Björk, C Fasth, C Thelander, L Samuelson Physical Review B 71 (20), 205328, 2005 | 174 | 2005 |
| InAs/GaSb heterostructure nanowires for tunnel field-effect transistors BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander Nano letters 10 (10), 4080-4085, 2010 | 170 | 2010 |
| Gold nanoparticle single-electron transistor with carbon nanotube leads C Thelander, MH Magnusson, K Deppert, L Samuelson, PR Poulsen, ... Applied Physics Letters 79 (13), 2106-2108, 2001 | 127 | 2001 |
| Gold nanoparticle single-electron transistor with carbon nanotube leads C Thelander, MH Magnusson, K Deppert, L Samuelson, PR Poulsen, ... Applied Physics Letters 79 (13), 2106-2108, 2001 | 127 | 2001 |
| High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ... IEEE Electron device letters 34 (2), 211-213, 2013 | 120 | 2013 |
Wernersson Lars-ErikLund UniversityVerified email at eit.lth.se
