A conducting polymer with enhanced electronic stability applied in cardiac models D Mawad, C Mansfield, A Lauto, F Perbellini, GW Nelson, J Tonkin, ...
Science advances 2 (11), e1601007, 2016
208 2016 Epitaxial Pb on InAs nanowires for quantum devices T Kanne, M Marnauza, D Olsteins, DJ Carrad, JE Sestoft, J De Bruijckere, ...
Nature Nanotechnology 16 (7), 776-781, 2021
77 2021 Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids DJ Carrad, M Bjergfelt, T Kanne, M Aagesen, F Krizek, EM Fiordaliso, ...
Advanced Materials 32 (23), 1908411, 2020
71 2020 InAs nanowire transistors with multiple, independent wrap-gate segments AM Burke, DJ Carrad, JG Gluschke, K Storm, S Fahlvik Svensson, H Linke, ...
Nano letters 15 (5), 2836-2843, 2015
44 2015 Diluted oxide interfaces with tunable ground states Y Gan, DV Christensen, Y Zhang, H Zhang, D Krishnan, Z Zhong, W Niu, ...
Advanced Materials 31 (10), 1805970, 2019
42 2019 Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors DJ Carrad, AM Burke, RW Lyttleton, HJ Joyce, HH Tan, C Jagadish, ...
Nano letters 14 (1), 94-100, 2014
35 2014 Superconducting vanadium/indium-arsenide hybrid nanowires M Bjergfelt, DJ Carrad, T Kanne, M Aagesen, EM Fiordaliso, E Johnson, ...
Nanotechnology 30 (29), 294005, 2019
34 2019 Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry DJ Carrad, AB Mostert, AR Ullah, AM Burke, HJ Joyce, HH Tan, ...
Nano Letters 17 (2), 827-833, 2017
34 2017 Quantum‐confinement‐enhanced thermoelectric properties in modulation‐doped GaAs–AlGaAs core–shell nanowires S Fust, A Faustmann, DJ Carrad, J Bissinger, B Loitsch, M Döblinger, ...
Advanced Materials 32 (4), 1905458, 2020
24 2020 Quantum transport and sub-band structure of modulation-doped GaAs/AlAs Core–superlattice nanowires DM Irber, J Seidl, DJ Carrad, J Becker, N Jeon, B Loitsch, J Winnerl, ...
Nano letters 17 (8), 4886-4893, 2017
23 2017 Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors JG Gluschke, J Seidl, AM Burke, RW Lyttleton, DJ Carrad, AR Ullah, ...
Nanotechnology 30 (6), 064001, 2018
19 2018 Origin of gate hysteresis in -type Si-doped AlGaAs/GaAs heterostructures AM Burke, DEJ Waddington, DJ Carrad, RW Lyttleton, HH Tan, PJ Reece, ...
Physical Review B 86 (16), 165309, 2012
19 2012 Using ultrathin parylene films as an organic gate insulator in nanowire field-effect transistors JG Gluschke, J Seidl, RW Lyttleton, DJ Carrad, JW Cochrane, S Lehmann, ...
Nano letters 18 (7), 4431-4439, 2018
16 2018 Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics SF Svensson, AM Burke, DJ Carrad, M Leijnse, H Linke, AP Micolich
Advanced Functional Materials 25 (2), 255-262, 2015
15 2015 The effect of (NH4) 2Sx passivation on the (311) A GaAs surface and its use in AlGaAs/GaAs heterostructure devices DJ Carrad, AM Burke, PJ Reece, RW Lyttleton, DEJ Waddington, A Rai, ...
Journal of Physics: Condensed Matter 25 (32), 325304, 2013
15 2013 Andreev Interference in the Surface Accumulation Layer of Half‐Shell InAsSb/Al Hybrid Nanowires L Stampfer, DJ Carrad, D Olsteins, CEN Petersen, SA Khan, P Krogstrup, ...
Advanced Materials 34 (11), 2108878, 2022
10 2022 Epitaxially driven phase selectivity of Sn in hybrid quantum nanowires SA Khan, S Martí-Sánchez, D Olsteins, C Lampadaris, DJ Carrad, Y Liu, ...
ACS nano 17 (12), 11794-11804, 2023
9 2023 Doubling the mobility of InAs/InGaAs selective area grown nanowires DV Beznasyuk, S Martí-Sánchez, JH Kang, R Tanta, M Rajpalke, ...
Physical Review Materials 6 (3), 034602, 2022
9 2022 Superconductivity and parity preservation in as-grown in islands on InAs nanowires MS Bjergfelt, DJ Carrad, T Kanne, E Johnson, EM Fiordaliso, ...
Nano letters 21 (23), 9875-9881, 2021
9 2021 Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes AR Ullah, DJ Carrad, P Krogstrup, J Nygård, AP Micolich
Physical Review Materials 2 (2), 025601, 2018
8 2018