| Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy E Iliopoulos, TD Moustakas Applied physics letters 81 (2), 295-297, 2002 | 126 | 2002 |
| Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas Applied Physics Letters 92 (19), 191907, 2008 | 125 | 2008 |
| Broadening of near-band-gap photoluminescence in films E Iliopoulos, D Doppalapudi, HM Ng, TD Moustakas Applied physics letters 73 (3), 375-377, 1998 | 117 | 1998 |
| Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ... Journal of applied physics 97 (11), 113520, 2005 | 112 | 2005 |
| Distributed Bragg reflectors based on AlN/GaN multilayers HM Ng, D Doppalapudi, E Iliopoulos, TD Moustakas Applied Physics Letters 74 (7), 1036-1038, 1999 | 112 | 1999 |
| Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy D Doppalapudi, E Iliopoulos, SN Basu, TD Moustakas journal of applied physics 85 (7), 3582-3589, 1999 | 89 | 1999 |
| Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ... Journal of crystal growth 278 (1-4), 426-430, 2005 | 82 | 2005 |
| Chemical ordering in AlGaN alloys grown by molecular beam epitaxy E Iliopoulos, KF Ludwig Jr, TD Moustakas, SNG Chu Applied Physics Letters 78 (4), 463-465, 2001 | 75 | 2001 |
| Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas Applied physics letters 88 (19), 191918, 2006 | 72 | 2006 |
| InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ... physica status solidi (a) 203 (1), 102-105, 2006 | 71 | 2006 |
| All-dielectric GaN microcavity: Strong coupling and lasing at room temperature KS Daskalakis, PS Eldridge, G Christmann, E Trichas, R Murray, ... Applied Physics Letters 102 (10), 101113, 2013 | 68 | 2013 |
| Growth and device applications of III-nitrides by MBE TD Moustakas, E Iliopoulos, AV Sampath, HM Ng, D Doppalapudi, ... Journal of crystal growth 227, 13-20, 2001 | 67 | 2001 |
| Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ... Applied Physics Letters 95 (2), 021913, 2009 | 62 | 2009 |
| Bowing of the band gap pressure coefficient in alloys G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Munoz, ... Journal of Applied Physics 103 (3), 033514, 2008 | 60 | 2008 |
| Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas Applied Physics Letters 86 (13), 133104, 2005 | 57 | 2005 |
| Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy C Bazioti, E Papadomanolaki, T Kehagias, T Walther, ... Journal of Applied Physics 118 (15), 155301, 2015 | 55 | 2015 |
| Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys M Androulidaki, NT Pelekanos, K Tsagaraki, E Dimakis, E Iliopoulos, ... physica status solidi c 3 (6), 1866-1869, 2006 | 51 | 2006 |
| High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors A Bhattacharyya, S Iyer, E Iliopoulos, AV Sampath, J Cabalu, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 51 | 2002 |
| Thermal oxidation of n-type ZnN films made by rf-sputtering from a zinc nitride target, and their conversion into p-type films V Kambilafka, P Voulgaropoulou, S Dounis, E Iliopoulos, M Androulidaki, ... Superlattices and Microstructures 42 (1-6), 55-61, 2007 | 50 | 2007 |
| Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy T Kehagias, A Delimitis, P Komninou, E Iliopoulos, E Dimakis, ... Applied Physics Letters 86 (15), 151905, 2005 | 48 | 2005 |
