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Gali Ádám
Gali Ádám
Wigner Research Centre for Physics, Hungarian Academy of Sciences
Bestätigte E-Mail-Adresse bei wigner.mta.hu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
5202015
A silicon carbide room-temperature single-photon source
S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ...
Nature materials 13 (2), 151-156, 2014
5052014
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
4952011
Electronic structure of the silicon vacancy color center in diamond
C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ...
Physical Review Letters 112 (3), 036405, 2014
3772014
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
A Gali, M Fyta, E Kaxiras
Physical Review B 77 (15), 155206, 2008
3742008
Electrically driven single-photon source at room temperature in diamond
N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ...
Nature photonics 6 (5), 299-303, 2012
3442012
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
P Deák, B Aradi, T Frauenheim, E Janzén, A Gali
Physical Review B 81 (15), 153203, 2010
2912010
Molecular-sized fluorescent nanodiamonds
II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ...
Nature nanotechnology 9 (1), 54-58, 2014
2792014
Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures
P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup
Physical review letters 110 (16), 167402, 2013
2432013
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
2362011
Divacancy in 4h-sic
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
2342006
Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR
G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ...
Physical review letters 106 (15), 157601, 2011
2202011
Theory of spin-conserving excitation of the N− V− center in diamond
A Gali, E Janzén, P Deák, G Kresse, E Kaxiras
Physical review letters 103 (18), 186404, 2009
2182009
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali
Physical review B 89 (7), 075203, 2014
2052014
Single-photon emitting diode in silicon carbide
A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ...
Nature communications 6 (1), 1-7, 2015
1882015
Electrically and mechanically tunable electron spins in silicon carbide color centers
AL Falk, PV Klimov, BB Buckley, V Ivády, IA Abrikosov, G Calusine, ...
Physical review letters 112 (18), 187601, 2014
1822014
Defects in as the possible origin of near interface traps in the system: A systematic theoretical study
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 72 (11), 115323, 2005
1802005
Theoretical study of the mechanism of dry oxidation of 4 H-SiC
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 71 (23), 235321, 2005
1752005
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, F Charles, K Szász, V Ivády, V Jokubavicius, ...
Physical Review X 7 (2), 021046, 2017
1732017
The mechanism of defect creation and passivation at the SiC/SiO2 interface
P Deak, JM Knaup, T Hornos, C Thill, A Gali, T Frauenheim
Journal of Physics D: Applied Physics 40 (20), 6242, 2007
1722007
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