Gali Ádám
Gali Ádám
Wigner Research Centre for Physics, Hungarian Academy of Sciences
Verified email at wigner.mta.hu - Homepage
Title
Cited by
Cited by
Year
A silicon carbide room-temperature single-photon source
S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ...
Nature materials 13 (2), 151-156, 2014
3942014
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
3782011
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
3642015
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
A Gali, M Fyta, E Kaxiras
Physical Review B 77 (15), 155206, 2008
3062008
Electronic structure of the silicon vacancy color center in diamond
C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ...
Physical Review Letters 112 (3), 036405, 2014
2822014
Electrically driven single-photon source at room temperature in diamond
N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ...
Nature photonics 6 (5), 299-303, 2012
2822012
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
P Deák, B Aradi, T Frauenheim, E Janzén, A Gali
Physical Review B 81 (15), 153203, 2010
2332010
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
2182011
Molecular-sized fluorescent nanodiamonds
II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ...
Nature nanotechnology 9 (1), 54-58, 2014
2172014
Divacancy in 4H-SiC
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
1992006
Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures
P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup
Physical review letters 110 (16), 167402, 2013
1902013
Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR
G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ...
Physical review letters 106 (15), 157601, 2011
1842011
Defects in as the possible origin of near interface traps in the system: A systematic theoretical study
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 72 (11), 115323, 2005
1602005
Theoretical study of the mechanism of dry oxidation of 4 H-SiC
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 71 (23), 235321, 2005
1602005
Theory of spin-conserving excitation of the N− V− center in diamond
A Gali, E Janzén, P Deák, G Kresse, E Kaxiras
Physical review letters 103 (18), 186404, 2009
1552009
Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
A Gali
Physical Review B 73 (24), 245415, 2006
1542006
The mechanism of defect creation and passivation at the SiC/SiO2 interface
P Deak, JM Knaup, T Hornos, C Thill, A Gali, T Frauenheim
Journal of Physics D: Applied Physics 40 (20), 6242, 2007
1462007
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali
Physical Review B 89 (7), 075203, 2014
1382014
Single-photon emitting diode in silicon carbide
A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ...
Nature communications 6 (1), 1-7, 2015
1352015
Ab initio study of the split silicon-vacancy defect in diamond: Electronic structure and related properties
A Gali, JR Maze
Physical Review B 88 (23), 235205, 2013
1312013
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Articles 1–20