Folgen
Tomoki Yamashita
Tomoki Yamashita
Bestätigte E-Mail-Adresse bei vos.nagaokaut.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Crystal structure prediction accelerated by Bayesian optimization
T Yamashita, N Sato, H Kino, T Miyake, K Tsuda, T Oguchi
Physical Review Materials 2 (1), 013803, 2018
1602018
Band alignment tuning in twin-plane superlattices of semiconductor nanowires
T Akiyama, T Yamashita, K Nakamura, T Ito
Nano letters 10 (11), 4614-4618, 2010
522010
Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation
T Akiyama, T Yamashita, K Nakamura, T Ito
Journal of crystal growth 318 (1), 79-83, 2011
452011
Crystal structure predictions of NaxC6O6 for sodium-ion batteries: First-principles calculations with an evolutionary algorithm
T Yamashita, H Momida, T Oguchi
Electrochimica Acta 195, 1-8, 2016
382016
Effects of facet orientation on relative stability between zinc blende and wurtzite structures in group III–V nanowires
T Yamashita, T Akiyama, K Nakamura, T Ito
Japanese Journal of Applied Physics 49 (5R), 055003, 2010
352010
Cathode properties of perovskite-type NaMF3 (M= Fe, Mn, and Co) prepared by mechanical ball milling for sodium-ion battery
A Kitajou, Y Ishado, T Yamashita, H Momida, T Oguchi, S Okada
Electrochimica Acta 245, 424-429, 2017
332017
First-principles study on structural and electronic properties of α-S and Na–S crystals
H Momida, T Yamashita, T Oguchi
Journal of the Physical Society of Japan 83 (12), 124713, 2014
302014
First-Principles Investigation of a Phase Transition in NaxC6O6 as an Organic Cathode Material for Na-ion Batteries: Role of Intermolecule Bonding of C6O6
T Yamashita, H Momida, T Oguchi
Journal of the Physical Society of Japan 84 (7), 074703, 2015
272015
Fine-grained optimization method for crystal structure prediction
K Terayama, T Yamashita, T Oguchi, K Tsuda
npj Computational Materials 4 (1), 32, 2018
262018
Surface reconstructions on GaN and InN semipolar (1122) surfaces
T Yamashita, T Akiyama, K Nakamura, T Ito
Japanese journal of applied physics 48 (12R), 120201, 2009
252009
Theoretical investigations on the formation of wurtzite segments in group III–V semiconductor nanowires
T Yamashita, K Sano, T Akiyama, K Nakamura, T Ito
Applied surface science 254 (23), 7668-7671, 2008
232008
CrySPY: a crystal structure prediction tool accelerated by machine learning
T Yamashita, S Kanehira, N Sato, H Kino, K Terayama, H Sawahata, ...
Science and Technology of Advanced Materials: Methods 1 (1), 87-97, 2021
182021
Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets
T Yamashita, T Akiyama, K Nakamura, T Ito
Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2727-2730, 2010
182010
Surface reconstructions on GaN and InN semipolar (2021) surfaces
T Yamashita, T Akiyama, K Nakamura, T Ito
Japanese Journal of Applied Physics 49 (1R), 018001, 2010
162010
Discharge Reaction Mechanisms in Na/FeS2 Batteries: First-Principles Calculations
H Momida, A Kitajou, S Okada, T Yamashita, T Oguchi
journal of the physical society of japan 84 (12), 124709, 2015
142015
Stability and indium incorporation processes on In0. 25Ga0. 75N surfaces under growth conditions: First-principles calculations
T Akiyama, T Yamashita, K Nakamura, T Ito
Japanese Journal of Applied Physics 49 (3R), 030212, 2010
132010
Ab initio-based study for adatom kinetics on semipolar GaN (1122) surfaces
T Akiyama, T Yamashita, K Nakamura, T Ito
Japanese journal of applied physics 48 (12R), 120218, 2009
132009
Adjusting the descriptor for a crystal structure search using Bayesian optimization
N Sato, T Yamashita, T Oguchi, K Hukushima, T Miyake
Physical Review Materials 4 (3), 033801, 2020
82020
Growth of side facets in InP nanowires: First-principles-based approach
T Yamashita, T Akiyama, K Nakamura, T Ito
Surface science 609, 207-214, 2013
72013
Theoretical investigation of effect of side facets on adsorption–desorption behaviors of In and P atoms at top layers in InP nanowires
T Yamashita, T Akiyama, K Nakamura, T Ito
Japanese Journal of Applied Physics 50 (5R), 055001, 2011
72011
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20