| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 425 | 2016 |
| Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012 | 337 | 2012 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 272 | 2017 |
| Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019 | 238 | 2019 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 212 | 2016 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 203 | 2017 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 199 | 2016 |
| Ferroelectricity in HfO2enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 Symposium on VLSI Technology (VLSIT), 25-26, 2012 | 196 | 2012 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 167 | 2017 |
| Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors T Mikolajick, S Slesazeck, MH Park, U Schroeder Mrs Bulletin 43 (5), 340-346, 2018 | 163 | 2018 |
| Nonlinear dynamics of a locally-active memristor A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015 | 133 | 2015 |
| Physical model of threshold switching in NbO 2 based memristors S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ... RSC advances 5 (124), 102318-102322, 2015 | 132 | 2015 |
| Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ... Ieee Transactions on Electron Devices 61 (11), 3699-3706, 2014 | 125 | 2014 |
| Nanoscale resistive switching memory devices: a review S Slesazeck, T Mikolajick Nanotechnology 30 (35), 352003, 2019 | 117 | 2019 |
| Mimicking biological neurons with a nanoscale ferroelectric transistor H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck Nanoscale 10 (46), 21755-21763, 2018 | 116 | 2018 |
| The past, the present, and the future of ferroelectric memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020 | 106 | 2020 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 97 | 2015 |
| Elementary aspects for circuit implementation of reconfigurable nanowire transistors J Trommer, A Heinzig, S Slesazeck, T Mikolajick, WM Weber IEEE electron device letters 35 (1), 141-143, 2013 | 92 | 2013 |
| On the stabilization of ferroelectric negative capacitance in nanoscale devices M Hoffmann, M Pešić, S Slesazeck, U Schroeder, T Mikolajick Nanoscale 10 (23), 10891-10899, 2018 | 88 | 2018 |
| Semiconductor device, an electronic device and a method for operating the same S Slesazeck US Patent 7,688,660, 2010 | 87 | 2010 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for nanoelectronic materials, TU DresdenVerified email at namlab.com
