Arnab Bhattacharya
Arnab Bhattacharya
Professor, Dept. of CMPMS, Tata Institute of Fundamental Research
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Titel
Zitiert von
Zitiert von
Jahr
Erratum:‘‘8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers’’[Appl. Phys. Lett. 69, 1532 (1996)]
LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ...
Applied Physics Letters 69 (22), 3437-3437, 1996
210*1996
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ...
Applied physics letters 69 (11), 1532-1534, 1996
2101996
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ...
IEEE Transactions on Electron Devices 60 (10), 3157-3165, 2013
1542013
Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals
AB Bhakti Jariwala, Damien Voiry, Apoorv Jindal, Bhagyashree A Chalke ...
Chemistry of Materials, 10.1021/acs.chemmater.6b00364, 2016
111*2016
66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers
D Botez, LJ Mawst, A Bhattacharya, J Lopez, J Li, TF Kuech, VP Iakovlev, ...
Electronics Letters 32 (21), 2012-2013, 1996
1111996
Magnetotransport properties of individual InAs nanowires
S Dhara, HS Solanki, V Singh, A Narayanan, P Chaudhari, M Gokhale, ...
Physical Review B 79 (12), 121311, 2009
922009
A facile process for soak-and-peel delamination of CVD graphene from substrates using water
P Gupta, PD Dongare, S Grover, S Dubey, H Mamgain, A Bhattacharya, ...
Scientific reports 4, 3882, 2014
832014
Correlation of InGaP (001) surface structure during growth and bulk ordering
M Zorn, P Kurpas, AI Shkrebtii, B Junno, A Bhattacharya, K Knorr, ...
Physical Review B 60 (11), 8185, 1999
731999
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ...
Journal of Crystal Growth 372, 105-108, 2013
692013
Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2
A Arora, J Noky, M Drüppel, B Jariwala, T Deilmann, R Schneider, ...
Nano letters 17 (5), 3202-3207, 2017
662017
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ...
Scientific Reports 6, 23708, 2016
522016
Three-core ARROW-type diode laser: novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's
C Zmudzinski, D Botez, LI Mawst, A Bhattacharya, M Nesnidal, RF Nabiev
IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 129-137, 1995
521995
Study of sputtered molybdenum nitride as a diffusion barrier
NG Anitha, V.P., Bhattacharya, A., Patil, M S.
Thin Solid Films 236 (1), 306-310, 1993
511993
10W near-diffraction-limited peak pulsed power from Al-free, 0.98 μm-emitting phase-locked antiguided arrays
H Yang, LJ Mawst, M Nesnidal, J Lopez, A Bhattacharya, D Botez
Electronics Letters 33 (2), 136-137, 1997
501997
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ...
Applied Physics Letters 101 (12), 121919, 2012
492012
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
LJ Mawst, A Bhattacharya, M Nesnidal, J Lopez, D Botez, JA Morris, ...
Applied physics letters 67 (20), 2901-2903, 1995
491995
Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content
MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ...
Journal of Applied Physics 109 (1), 013107-013107-8, 2011
462011
Tuning mechanical modes and influence of charge screening in nanowire resonators
HS Solanki, S Sengupta, S Dhara, V Singh, S Patil, R Dhall, J Parpia, ...
Physical Review B 81 (11), 115459, 2010
462010
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes
S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ...
Advanced Functional Materials 21 (20), 3828-3835, 2011
422011
Nanostructured MoS2/BiVO4 Composites for Energy Storage Applications
Y Arora, AP Shah, S Battu, CB Maliakkal, S Haram, A Bhattacharya, ...
Scientific Reports 6, 36294, 2016
342016
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