JM Galliere
JM Galliere
Verified email at lirmm.fr
Title
Cited by
Cited by
Year
Resistive bridge fault model evolution from conventional to ultra deep submicron
I Polian, P Engelke, B Becker, S Kundu, JM Galliere, M Renovell
23rd IEEE VLSI Test Symposium (VTS'05), 343-348, 2005
522005
Boolean and current detection of MOS transistor with gate oxide short
M Renovell, JM Galliere, F Azaïs, Y Bertrand
Proceedings International Test Conference 2001 (Cat. No. 01CH37260), 1039-1048, 2001
322001
Delay testing of MOS transistor with gate oxide short
M Renovell, Y Bertrand
null, 168, 2003
292003
Modeling gate oxide short defects in CMOS minimum transistors
M Renovell, JM Gallière, F Azaïs, Y Bertrand
Proceedings The Seventh IEEE European Test Workshop, 15-20, 2002
282002
Modeling the random parameters effects in a non-split model of gate oxide short
M Renovell, JM Gallière, F Azaïs, Y Bertrand
Journal of Electronic Testing 19 (4), 377-386, 2003
222003
Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect
A Karel, M Comte, JM Galliere, F Azaïs, M Renovell
2016 17th Latin-American Test Symposium (LATS), 129-134, 2016
112016
Impact of resistive-open defects on SRAM error rate induced by alpha particles and neutrons
P Rech, JM Galliere, P Girard, F Wrobel, F Saigne, L Dilillo
IEEE Transactions on Nuclear Science 58 (3), 855-861, 2011
112011
Neutron-induced multiple bit upsets on two commercial SRAMs under dynamic-stress
P Rech, JM Galliere, P Girard, A Griffoni, J Boch, F Wrobel, F Saigné, ...
IEEE Transactions on Nuclear Science 59 (4), 893-899, 2012
102012
A unified electrical SPICE model for piezoelectric transducers
JM Gallière, P Papet, L Latorre
2007 IEEE International Behavioral Modeling and Simulation Workshop, 138-142, 2007
82007
Analysis of short defects in FinFET based logic cells
F Forero, JM Galliere, M Renovell, V Champac
2017 18th IEEE Latin American Test Symposium (LATS), 1-6, 2017
72017
Analysing the characteristics of MOS transistors in the presence of gate oxide short
M Renovell, JM Gallière, F Azaïs, Y Bertrand
Design & Diag. of Electr. Circuits and Syst, 155-161, 2001
72001
A complete analysis of the voltage behaviour of MOS transistor with Gate Oxide Short
M Renovell, JM Gallière, F Azaïs, Y Bertrand
Defect-Based Testing Work, 5-10, 2001
72001
Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI--LVT and RVT Configurations
A Karel, M Comte, JM Galliere, F Azais, M Renovell
2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 164-169, 2016
62016
Neutron detection through an SRAM-based test bench
L Dilillo, F Wrobel, JM Galliere, F Saigné
2009 3rd International Workshop on Advances in sensors and Interfaces, 64-69, 2009
62009
A control-systems FPAA based tutorial
JM Galliere
Proceedings of the 2nd WSEAS/IASME International Conference on Educational …, 2006
62006
A compact DC model of gate oxide short defect
R Bouchakour, JM Portal, JM Galliere, F Azaïs, Y Bertrand, M Renovell
Microelectronic engineering 72 (1-4), 140-148, 2004
62004
Thermal scans for detecting hardware Trojans
M Cozzi, JM Galliere, P Maurine
International Workshop on Constructive Side-Channel Analysis and Secure …, 2018
52018
Neuton-induced Multiple Bit Upsets on dynamically-stressed commercial SRAM arrays
P Rech, JM Galliere, P Girard, A Griffoni, J Boch, F Wrobel, F Saigne, ...
2011 12th European Conference on Radiation and Its Effects on Components and …, 2011
52011
Experimental characterization of an atmospheric environment with a stratospheric balloon
F Wrobel, JR Vaillé, D Pantel, L Dilillo, P Rech, JM Galliere, A Touboul, ...
IEEE Transactions on Nuclear Science 58 (3), 945-951, 2011
42011
A 2-D KLM model for disk-shape piezoelectric transducers
JM Galliere, L Latorre, P Papet
2009 Second International Conference on Advances in Circuits, Electronics …, 2009
42009
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Articles 1–20