Raman scattering study of photoluminescent spark-processed porous InP M Rojas-Lopez, J Nieto-Navarro, E Rosendo, H Navarro-Contreras, ... Thin Solid Films 379 (1-2), 1-6, 2000 | 52 | 2000 |
Optimization of InAsSb photodetector for non‐cryogenic operation in the mid‐infrared range H Aït‐Kaci, J Nieto, JB Rodriguez, P Grech, F Chevrier, A Salesse, ... Physica status solidi (a) 202 (4), 647-651, 2005 | 27 | 2005 |
Surface passivation of GaInAsSb photodiodes with thioacetamide A Salesse, A Joullié, P Calas, J Nieto, F Chevrier, Y Cuminal, ... physica status solidi c 4 (4), 1508-1512, 2007 | 18 | 2007 |
High sensitivity bolometers from thymine functionalized multi-walled carbon nanotubes JGNN Guadalupe García-Valdiviesoa, Hugo R. Navarro-Contrerasa, , , Gustavo ... Sensors and Actuators B: Chemical 238, 880-887, 2017 | 11 | 2017 |
High sensitivity bolometers from thymine functionalized multi-walled carbon nanotubes JGNN Guadalupe García-Valdiviesoa, Hugo R. Navarro-Contrerasa, , , Gustavo ... Sensors and Actuators B: Chemical 238, 880-887, 2017 | 11 | 2017 |
Flexible conductive films fabricated by evaporation on partially cured polydimethyl-siloxane JH García-Gallegos, JG Nieto-Navarro, EE Araujo-Palomo, ... Materials Letters 115, 100-102, 2014 | 8 | 2014 |
Carrier concentration control of GaSb/GaInAsSb system JL Lazzari, F De Anda, J Nieto, H Aït‐Kaci, M Mebarki, F Chevrier, ... AIP Conference Proceedings 890 (1), 115-126, 2007 | 7 | 2007 |
A survey of new laser and detector structures for 3-5 µm midinfrared spectral range AF Joullie, P Christol, JB Rodriguez, H Ait-Kaci, F Chevrier, J Nieto, ... Advanced Optoelectronics and lasers 5582, 211-221, 2004 | 5 | 2004 |
Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films LI Espinosa-Vega, AG Rodriguez, E Cruz-Hernandez, I Martinez-Veliz, ... Journal of crystal growth 378, 105-108, 2013 | 2 | 2013 |
A superlattice infrared photodetector operating at room temperature in the 3-5 μm wavelength domain JB Rodriguez, P Christol, F Chevrier, J Nieto, A Joullie Narrow Gap Semiconductors, 413-418, 2006 | 1 | 2006 |
Influence of baking on the photoluminescence spectra of Ini1-xGa xAs yPi1-y solid solutions grown on Inp substrates VA Mishurnyi, AY Gorbatchev, F De Anda, J Nieto-Navarro Revista mexicana de física 50 (3), 216-220, 2004 | 1 | 2004 |
Hologramas tipo Lohmann multiplexados M Araiza, S Guel, C Sifuentes, A Lastras, J Nieto Revista mexicana de física 53 (4), 235-240, 2007 | | 2007 |
INFLUENCE OF BAKING ON THE PHOTOLUMINESCENCE SPECTRA OF IN 1-X GA X AS Y P 1-Y SOLID SOLUTIONS GROWN ON INP SUBSTRATES VA MISHURNYI, A GORBATCHEV, F ANDA, J NIETO-NAVARRO MEXICANA DE FISICA Учредители: Siciedad Mexicana de Fisica, 2000 | | 2000 |
A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers VA Mishurnyi, F De Anda, AY Gorbatchev, IC Hernández, D Castillo, ... Journal of electronic materials 27, 1003-1004, 1998 | | 1998 |