| CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors F Wessely, T Krauss, U Schwalke Solid-state electronics 70, 33-38, 2012 | 40 | 2012 |
| On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes IEEE Transactions on Electron Devices, 1-8, 2017 | 34 | 2017 |
| Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs F Wessely, T Krauss, U Schwalke Microelectronics Journal 44 (12), 1072-1076, 2013 | 28 | 2013 |
| Dopant-free CMOS on SOI: multi-gate Si-nanowire transistors for logic and memory applications U Schwalke, T Krauss, F Wessely ECS Transactions 53 (5), 105, 2013 | 20 | 2013 |
| Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS T Krauss, F Wessely, U Schwalke 2016 13th International Multi-Conference on Systems, Signals & Devices (SSD …, 2016 | 17 | 2016 |
| Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications F Wessely, T Krauss, U Schwalke Solid-State Electronics 74, 91-96, 2012 | 17 | 2012 |
| From mosfets to ambipolar transistors: Standard cell synthesis for the planar rfet technology M Reuter, J Pfau, TA Krauss, J Becker, K Hofmann IEEE Transactions on Circuits and Systems I: Regular Papers 68 (1), 114-125, 2020 | 16 | 2020 |
| Electrostatically doped planar field-effect transistor for high temperature applications T Krauss, F Wessely, U Schwalke ECS Journal of Solid State Science and Technology 4 (5), Q46, 2015 | 14 | 2015 |
| Dopant-independent and voltage-selectable silicon-nanowire-CMOS technology for reconfigurable logic applications F Wessely, T Krauss, U Schwalke 2010 proceedings of the European solid state device research conference, 365-367, 2010 | 13 | 2010 |
| Damascene TiN–Gd2O3-gate stacks: Gentle fabrication and electrical properties R Endres, T Krauss, F Wessely, U Schwalke Microelectronic engineering 88 (12), 3393-3398, 2011 | 11 | 2011 |
| CMOS without doping on SOI: multi-gate Si-nanowire transistors for logic and memory applications U Schwalke, T Krauss, F Wessely ECS Journal of Solid State Science and Technology 2 (6), Q88, 2013 | 10 | 2013 |
| Favorable combination of Schottky barrier and junctionless properties in field-effect transistors for high temperature applications TA Krauss, F Wessely, U Schwalke ECS Transactions 75 (13), 57, 2016 | 8 | 2016 |
| Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS T Krauss, F Wessely, U Schwalke 2017 12th International Conference on Design & Technology of Integrated …, 2017 | 7 | 2017 |
| Novel application of wafer-bonded MultiSOI: Junctionless nanowire transistors for CMOS logic F Wessely, T Krauss, U Schwalke ECS Transactions 33 (4), 169, 2010 | 7 | 2010 |
| Towards ambipolar planar devices: The defet device in area constrained xor applications M Reuter, J Pfau, TA Krauss, M Moradinasab, U Schwalke, J Becker, ... 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020 | 6 | 2020 |
| From mosfets to ambipolar transistors: A static defet inverter cell for soi M Reuter, TA Krauss, M Moradinasab, J Pfau, U Schwalke, J Becker, ... 2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 113-116, 2019 | 6 | 2019 |
| Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS T Krauss, F Wessely, U Schwalke 2018 13th International Conference on Design & Technology of Integrated …, 2018 | 6 | 2018 |
| CMOS without doping: midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications F Wessely, T Krauss, U Schwalke 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 6 | 2011 |
| Analysis and investigation of Schottky barrier MOSFET current injection with process and device simulation M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes International Journal of Microelectronics and Computer Science 9 (1), 2018 | 5 | 2018 |
| Dopant-free CMOS: a new device concept F Wessely, T Krauss, U Schwalke 7th International Conference on Design & Technology of Integrated Systems in …, 2012 | 5 | 2012 |
