| Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures I Mahaboob, K Hogan, SW Novak, F Shahedipour-Sandvik, RP Tompkins, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 26 | 2018 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 22 | 2020 |
| Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ... Scientific Reports 10 (1), 1426, 2020 | 21 | 2020 |
| Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ... IEEE Journal of the Electron Devices Society 7, 581-588, 2019 | 20 | 2019 |
| Selective area epitaxial growth of stretchable geometry AlGaN-GaN heterostructures I Mahaboob, J Marini, K Hogan, E Rocco, RP Tompkins, N Lazarus, ... Journal of Electronic Materials 47, 6625-6634, 2018 | 18 | 2018 |
| Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN: Mg J Marini, I Mahaboob, K Hogan, S Novak, LD Bell, ... Journal of Electronic Materials 46 (10), 5820-5826, 2017 | 17 | 2017 |
| Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors A Laudari, A Pickett, F Shahedipour‐Sandvik, K Hogan, JE Anthony, X He, ... Advanced Materials Interfaces 6 (4), 1801787, 2019 | 14 | 2019 |
| 3D GaN-based betavoltaic device design with high energy transfer efficiency K Hogan, M Litz, F Shahedipour-Sandvik Applied Radiation and Isotopes 145, 154-160, 2019 | 12 | 2019 |
| P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing V Meyers, E Rocco, K Hogan, B McEwen, M Shevelev, V Sklyar, K Jones, ... Journal of Applied Physics 130 (8), 2021 | 9 | 2021 |
| MOCVD Growth and Characterization of Be-Doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ... ACS Applied Electronic Materials 4 (8), 3780-3785, 2022 | 7 | 2022 |
| Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode I Mahaboob, M Yakimov, E Rocco, K Hogan, F Shahedipour-Sandvik IEEE Transactions on Electron Devices 67 (10), 3983-3987, 2020 | 7 | 2020 |
| Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN: Mg layer I Mahaboob, SW Novak, E Rocco, K Hogan, F Shahedipour-Sandvik Journal of Vacuum Science & Technology B 38 (6), 2020 | 5 | 2020 |
| Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ... Journal of Electronic Materials 49, 3481-3489, 2020 | 5 | 2020 |
| Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency E Rocco, I Mahaboob, K Hogan, V Meyers, B McEwen, LD Bell, ... Journal of Applied Physics 129 (19), 2021 | 4 | 2021 |
| Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor I Mahaboob, RJ Reinertsen, B McEwen, K Hogan, E Rocco, JA Melendez, ... Experimental Biology and Medicine 246 (5), 523-528, 2021 | 4 | 2021 |
| Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ... Journal of Electronic Materials 50, 80-84, 2021 | 4 | 2021 |
| Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 4 | 2019 |
| In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application K Hogan, M Rodriguez, E Rocco, V Meyers, B McEwen, ... AIP Advances 10 (8), 2020 | 2 | 2020 |
| Magnesium implant-activation in GaN: Impact of high-temperature annealing techniques on the state of implant induced defects and Mg activation (Conference Presentation) K Hogan, S Tozier, M Graziano, M Derenge, M Shevelev, V Sklyar, ... Gallium Nitride Materials and Devices XIV 10918, 109180X, 2019 | 2 | 2019 |
| Development of 3-inch AlN Single Crystal Substrates RT Bondokov, K Hogan, GQ Norbury, J Mark, SP Branagan, N Ishigami, ... ECS Transactions 109 (8), 13, 2022 | 1 | 2022 |
