Martin Eickhoff
Martin Eickhoff
Institut für Festkörperphysik, Universität Bremen
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Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
Binary copper oxide semiconductors: From materials towards devices
BK Meyer, A Polity, D Reppin, M Becker, P Hering, PJ Klar, T Sander, ...
physica status solidi (b) 249 (8), 1487-1509, 2012
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff
Applied Physics Letters 83 (1), 177-179, 2003
Playing with polarity
M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ...
physica status solidi (b) 228 (2), 505-512, 2001
Gas sensitive GaN/AlGaN-heterostructures
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Sensors and Actuators B: Chemical 87 (3), 425-430, 2002
Hydrogen response mechanism of Pt–GaN Schottky diodes
J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ...
Applied Physics Letters 80 (7), 1222-1224, 2002
GaN-based heterostructures for sensor applications
M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ...
Diamond and related materials 11 (3-6), 886-891, 2002
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...
Nano letters 12 (5), 2579-2586, 2012
AlxGa1–xN—A new material system for biosensors
G Steinhoff, O Purrucker, M Tanaka, M Stutzmann, M Eickhoff
Advanced Functional Materials 13 (11), 841-846, 2003
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy-The influence of Si-and Mg-doping
F Furtmayr, M Vielemeyer, M Stutzmann, J Arbiol, S Estradé, F Peirò, ...
Journal of Applied Physics 104 (3), 2008
Direct biofunctionalization of semiconductors: A survey
M Stutzmann, JA Garrido, M Eickhoff, MS Brandt
physica status solidi (a) 203 (14), 3424-3437, 2006
Recording of cell action potentials with AlGaN∕ GaN field-effect transistors
G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ...
Applied Physics Letters 86 (3), 2005
Chemical functionalization of GaN and AlN surfaces
B Baur, G Steinhoff, J Hernando, O Purrucker, M Tanaka, B Nickel, ...
Applied Physics Letters 87 (26), 2005
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications
M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ...
physica status solidi (c), 1908-1918, 2003
Tin-Assisted Synthesis of by Molecular Beam Epitaxy
M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ...
Physical Review Applied 8 (5), 054002, 2017
Influence of surface oxides on hydrogen-sensitive Pd: GaN Schottky diodes
O Weidemann, M Hermann, G Steinhoff, H Wingbrant, A Lloyd Spetz, ...
Applied Physics Letters 83 (4), 773-775, 2003
Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
F Furtmayr, M Vielemeyer, M Stutzmann, A Laufer, BK Meyer, M Eickhoff
Journal of Applied Physics 104 (7), 2008
Group III-nitride-based gas sensors for combustion monitoring
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Materials Science and Engineering: B 93 (1-3), 207-214, 2002
AlN/diamond heterojunction diodes
CR Miskys, JA Garrido, CE Nebel, M Hermann, O Ambacher, M Eickhoff, ...
Applied physics letters 82 (2), 290-292, 2003
Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy
TA Wassner, B Laumer, S Maier, A Laufer, BK Meyer, M Stutzmann, ...
Journal of Applied Physics 105 (2), 2009
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