Andrey Krysa
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Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE Journal of Quantum Electronics 42 (4), 397 - 403, 2006
quantum cascade lasers operating at wavelengths close to
DG Revin, JW Cockburn, MJ Steer, RJ Airey, M Hopkinson, AB Krysa, ...
Applied Physics Letters 90 (2), 021108, 2007
Direct measurement of the hole-nuclear spin interaction in single InP/GaInP quantum dots using photoluminescence spectroscopy
EA Chekhovich, AB Krysa, MS Skolnick, AI Tartakovskii
Physical review letters 106 (2), 027402, 2011
Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser
JE Hastie, LG Morton, AJ Kemp, MD Dawson, AB Krysa, JS Roberts
Applied Physics Letters 89 (6), 061114, 2006
Element-sensitive measurement of the hole–nuclear spin interaction in quantum dots
EA Chekhovich, MM Glazov, AB Krysa, M Hopkinson, P Senellart, ...
Nature Physics 9 (2), 74-78, 2013
Pumping of nuclear spins by optical excitation of spin-forbidden transitions in a quantum dot
EA Chekhovich, MN Makhonin, KV Kavokin, AB Krysa, MS Skolnick, ...
Physical review letters 104 (6), 066804, 2010
Structural analysis of strained quantum dots using nuclear magnetic resonance
EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ...
Nature nanotechnology 7 (10), 646-650, 2012
room temperature InGaAs/AlAsSb/InP quantum cascade lasers
SY Zhang, DG Revin, JW Cockburn, K Kennedy, AB Krysa, M Hopkinson
Applied Physics Letters 94 (3), 031106, 2009
Single-mode surface-emitting quantum-cascade lasers
C Pflügl, M Austerer, W Schrenk, S Golka, G Strasser, RP Green, ...
Applied Physics Letters 86 (21), 211102, 2005
A quantum light-emitting diode for the standard telecom window around 1550 nm
T Müller, J Skiba-Szymanska, AB Krysa, J Huwer, M Felle, M Anderson, ...
Nature Communications 9, 862, 2018
MOVPE-grown quantum cascade lasers operating at∼ 9 μm wavelength
AB Krysa, JS Roberts, RP Green, LR Wilson, H Page, M Garcia, ...
Journal of crystal growth 272 (1-4), 682-685, 2004
Temperature dependence of leakage current in InAs avalanche photodiodes
PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 – 755 nm
PJ Schlosser, JE Hastie, S Calvez, AB Krysa, MD Dawson
Optics Express 17 (24), 21782-21787, 2009
High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy
RP Green, LR Wilson, EA Zibik, DG Revin, JW Cockburn, C Pflügl, ...
Applied physics letters 85 (23), 5529-5531, 2004
Room-temperature operation of surface-plasmon quantum cascade lasers
M Bahriz, V Moreau, J Palomo, R Colombelli, DA Austin, JW Cockburn, ...
Applied physics letters 88 (18), 181103, 2006
Dynamics of optically induced nuclear spin polarization in individual InP/GaxIn1−xP quantum dots
EA Chekhovich, MN Makhonin, J Skiba-Szymanska, AB Krysa, ...
Physical Review B 81 (24), 245308, 2010
Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy
RP Green, A Krysa, JS Roberts, DG Revin, LR Wilson, EA Zibik, WH Ng, ...
Applied physics letters 83 (10), 1921-1922, 2003
Homogeneous array of nanowire-embedded quantum light emitters
MN Makhonin, AP Foster, AB Krysa, PW Fry, DG Davies, T Grange, ...
Nano letters 13 (3), 861-865, 2013
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
High peak power and InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K
JP Commin, DG Revin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn
Applied Physics Letters 97 (3), 031108, 2010
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