| Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka Nature Photonics 11 (8), 486-490, 2017 | 215 | 2017 |
| High‐performance circularly polarized light‐sensing near‐infrared organic phototransistors for optoelectronic cryptographic primitives H Han, YJ Lee, J Kyhm, JS Jeong, JH Han, MK Yang, KM Lee, Y Choi, ... Advanced Functional Materials 30 (52), 2006236, 2020 | 59 | 2020 |
| III–V/Si hybrid MOS optical phase shifter for Si photonic integrated circuits M Takenaka, JH Han, F Boeuf, JK Park, Q Li, CP Ho, D Lyu, S Ohno, ... Journal of Lightwave Technology 37 (5), 1474-1483, 2019 | 51 | 2019 |
| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ... Nanoscale 11 (48), 23139-23148, 2019 | 51 | 2019 |
| Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... IEEE Journal of the Electron Devices Society 6, 579-587, 2018 | 35 | 2018 |
| Verification of Ge-on-insulator structure for a mid-infrared photonics platform SH Kim, JH Han, JP Shim, H Kim, WJ Choi Optical Materials Express 8 (2), 440-451, 2018 | 35 | 2018 |
| Quantitative evaluation of energy distribution of interface trap density at MoS2MOS interfaces by the Terman method M Takenaka, Y Ozawa, J Han, S Takagi 2016 IEEE International Electron Devices Meeting (IEDM), 5.8. 1-5.8. 4, 2016 | 34 | 2016 |
| Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ... ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021 | 30 | 2021 |
| Benchmarking Si, SiGe, and III–V/Si hybrid SIS optical modulators for datacenter applications F Boeuf, JH Han, S Takagi, M Takenaka Journal of lightwave technology 35 (18), 4047-4055, 2017 | 30 | 2017 |
| Ultra-power-efficient 2× 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter Q Li, JH Han, CP Ho, S Takagi, M Takenaka Optics express 26 (26), 35003-35012, 2018 | 29 | 2018 |
| Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform M Takenaka, Y Kim, J Han, J Kang, Y Ikku, Y Cheng, J Park, M Yoshida, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (3), 64-76, 2017 | 29 | 2017 |
| Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators JH Han, M Takenaka, S Takagi Japanese Journal of Applied Physics 55 (4S), 04EC06, 2016 | 29 | 2016 |
| Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling JH Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi Microelectronic engineering 109, 266-269, 2013 | 28 | 2013 |
| Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation J Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi Applied Physics Express 6 (5), 051302, 2013 | 27 | 2013 |
| Simulation Study on the Design of Sub- Non-Hysteretic Negative Capacitance FET Using Capacitance Matching P Bidenko, S Lee, JH Han, JD Song, SH Kim IEEE Journal of the Electron Devices Society 6, 910-921, 2018 | 26 | 2018 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 21 | 2020 |
| Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 21 | 2019 |
| Heterogeneously-integrated optical phase shifters for next-generation modulators and switches on a silicon photonics platform: A review Y Kim, JH Han, D Ahn, S Kim Micromachines 12 (6), 625, 2021 | 20 | 2021 |
| High-speed and highly efficient Si optical modulator with strained SiGe layer J Fujikata, M Noguchi, Y Kim, J Han, S Takahashi, T Nakamura, ... Applied Physics Express 11 (3), 032201, 2018 | 19 | 2018 |
| Extremely high modulation efficiency iii-v/Si hybrid MOS optical modulator fabricated by direct wafer bonding JH Han, M Takenaka, S Takagi Electron Devices Meeting (IEDM), 2016 IEEE International, 25.5. 1-25.5. 4, 2016 | 19 | 2016 |
Mitsuru TakenakaThe University of TokyoVerified email at mosfet.t.u-tokyo.ac.jp
