| Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka Nature Photonics 11 (8), 486-490, 2017 | 234 | 2017 |
| High‐performance circularly polarized light‐sensing near‐infrared organic phototransistors for optoelectronic cryptographic primitives H Han, YJ Lee, J Kyhm, JS Jeong, JH Han, MK Yang, KM Lee, Y Choi, ... Advanced Functional Materials 30 (52), 2006236, 2020 | 71 | 2020 |
| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ... Nanoscale 11 (48), 23139-23148, 2019 | 55 | 2019 |
| III–V/Si hybrid MOS optical phase shifter for Si photonic integrated circuits M Takenaka, JH Han, F Boeuf, JK Park, Q Li, CP Ho, D Lyu, S Ohno, ... Journal of Lightwave Technology 37 (5), 1474-1483, 2019 | 54 | 2019 |
| Verification of Ge-on-insulator structure for a mid-infrared photonics platform SH Kim, JH Han, JP Shim, H Kim, WJ Choi Optical Materials Express 8 (2), 440-451, 2018 | 37 | 2018 |
| Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... IEEE Journal of the Electron Devices Society 6, 579-587, 2018 | 36 | 2018 |
| Quantitative evaluation of energy distribution of interface trap density at MoS2MOS interfaces by the Terman method M Takenaka, Y Ozawa, J Han, S Takagi 2016 IEEE International Electron Devices Meeting (IEDM), 5.8. 1-5.8. 4, 2016 | 35 | 2016 |
| Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ... ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021 | 32 | 2021 |
| Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform M Takenaka, Y Kim, J Han, J Kang, Y Ikku, Y Cheng, J Park, M Yoshida, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (3), 64-76, 2017 | 31 | 2017 |
| Ultra-power-efficient 2× 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter Q Li, JH Han, CP Ho, S Takagi, M Takenaka Optics express 26 (26), 35003-35012, 2018 | 29 | 2018 |
| Benchmarking Si, SiGe, and III–V/Si hybrid SIS optical modulators for datacenter applications F Boeuf, JH Han, S Takagi, M Takenaka Journal of lightwave technology 35 (18), 4047-4055, 2017 | 29 | 2017 |
| Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators JH Han, M Takenaka, S Takagi Japanese Journal of Applied Physics 55 (4S), 04EC06, 2016 | 29 | 2016 |
| Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling JH Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi Microelectronic engineering 109, 266-269, 2013 | 28 | 2013 |
| Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation J Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi Applied Physics Express 6 (5), 051302, 2013 | 28 | 2013 |
| Simulation Study on the Design of Sub- Non-Hysteretic Negative Capacitance FET Using Capacitance Matching P Bidenko, S Lee, JH Han, JD Song, SH Kim IEEE Journal of the Electron Devices Society 6, 910-921, 2018 | 27 | 2018 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 26 | 2020 |
| Heterogeneously-integrated optical phase shifters for next-generation modulators and switches on a silicon photonics platform: A review Y Kim, JH Han, D Ahn, S Kim Micromachines 12 (6), 625, 2021 | 24 | 2021 |
| Comprehensive understanding of the HZO-based n/pFeFET operation and device performance enhancement strategy SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim 2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021 | 22 | 2021 |
| Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 22 | 2019 |
| An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022 | 21 | 2022 |
Mitsuru TakenakaThe University of TokyoVerified email at mosfet.t.u-tokyo.ac.jp
