Timo Schumann
Timo Schumann
Lumiphase AG
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
High-mobility BaSnO3 grown by oxide molecular beam epitaxy
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
APL Materials 4 (1), 016106, 2016
Formation of high-quality quasi-free-standing bilayer graphene on SiC (0001) by oxygen intercalation upon annealing in air
MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ...
Carbon 52, 83-89, 2013
Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal
T Schumann, L Galletti, DA Kealhofer, H Kim, M Goyal, S Stemmer
Physical Review Letters 120 (1), 016801, 2018
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco
Nanotechnology 22 (9), 095603, 2011
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
S Nakhaie, JM Wofford, T Schumann, U Jahn, M Ramsteiner, M Hanke, ...
Applied Physics Letters 106 (21), 213108, 2015
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
T Gotschke, T Schumann, F Limbach, T Stoica, R Calarco
Applied Physics Letters 98 (10), 103102, 2011
Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal
B Cheng, N Kanda, TN Ikeda, T Matsuda, P Xia, T Schumann, S Stemmer, ...
Physical Review Letters 124 (11), 117402, 2020
Influence of the silicon carbide surface morphology on the epitaxial graphene formation
MH Oliveira Jr, T Schumann, M Ramsteiner, JMJ Lopes, H Riechert
Applied Physics Letters 99 (11), 111901, 2011
Mono-and few-layer nanocrystalline graphene grown on Al< sub> 2</sub> O< sub> 3</sub>(0001) by molecular beam epitaxy
MH Oliveira Jr, T Schumann, R Gargallo-Caballero, F Fromm, T Seyller, ...
Carbon 56, 339-350, 2013
Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2
T Schumann, M Goyal, DA Kealhofer, S Stemmer
Physical Review B 95 (24), 241113, 2017
Molecular beam epitaxy of Cd3As2 on a III-V substrate
T Schumann, M Goyal, H Kim, S Stemmer
APL Materials 4 (12), 126110, 2016
Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces
T Schumann, KJ Friedland, MH Oliveira Jr, A Tahraoui, JMJ Lopes, ...
Physical Review B 85 (23), 235402, 2012
Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy
T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (5 …, 2016
Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces
MH Oliveira Jr, JMJ Lopes, T Schumann, LA Galves, M Ramsteiner, ...
Nature Communications 6, 2015
Conduction band edge effective mass of La-doped BaSnO3
S James Allen, S Raghavan, T Schumann, KM Law, S Stemmer
Applied Physics Letters 108 (25), 252107, 2016
Acousto-electric transport in epitaxial monolayer graphene on SiC
PV Santos, T Schumann, MH Oliveira Jr, JMJ Lopes, H Riechert
Applied Physics Letters 102 (22), 221907, 2013
Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC (0001)
T Schumann, M Dubslaff, MH Oliveira Jr, M Hanke, JMJ Lopes, H Riechert
Physical Review B 90 (4), 041403(R), 2014
Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
M Goyal, L Galletti, S Salmani-Rezaie, T Schumann, DA Kealhofer, ...
APL Materials 6 (2), 026105, 2018
Two-dimensional Dirac fermions in thin films of
L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ...
Physical Review B 97 (11), 115132, 2018
A large effective phonon magnetic moment in a Dirac semimetal
B Cheng, T Schumann, Y Wang, X Zhang, D Barbalas, S Stemmer, ...
Nano Letters 20 (8), 5991-5996, 2020
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