Allen Gabor
Allen Gabor
Unknown affiliation
Verified email at ibm.com
Title
Cited by
Cited by
Year
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
P Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ...
2006 International Electron Devices Meeting, 1-4, 2006
1212006
High performance 14nm SOI FinFET CMOS technology with 0.0174Ám2embedded DRAM and 15 levels of Cu metallization
CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...
2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014
1162014
Imaging polymers with supercritical carbon dioxide
CK Ober, AH Gabor, P Gallagher‐Wetmore, RD Allen
Advanced Materials 9 (13), 1039-1043, 1997
911997
Binary OPC for assist feature layout optimization
LW Liebmann, RA Ferguson, AH Gabor, MA Lavin
US Patent 7,001,693, 2006
882006
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
B Walsh, H Utomo, E Leobandung, A Mahorowala, D Mocuta, K Miyamoto, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 170-171, 2006
812006
Positive/negative mid UV resists with high thermal stability
H Ito, CG Wilson, JMJ Frechet
Advances in Resist Technology and Processing IV 771, 24-31, 1987
681987
A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell
M Khare, SH Ku, RA Donaton, S Greco, C Brodsky, X Chen, A Chou, ...
Digest. International Electron Devices Meeting,, 407-410, 2002
632002
Silicon-containing block copolymer resist materials
AH Gabor, CK Ober
491995
Silicon containing polymer in applications for 193-nm high-NA lithography processes
S Burns, D Pfeiffer, A Mahorowala, K Petrillo, A Clancy, K Babich, ...
Advances in Resist Technology and Processing XXIII 6153, 61530K, 2006
482006
Lithographic properties of poly (tert-butyl methacrylate)-based block and random copolymer resists designed for 193 nm wavelength exposure tools
AH Gabor, LC Pruette, CK Ober
Chemistry of materials 8 (9), 2282-2290, 1996
481996
Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development
AH Gabor, RD Allen, PM Gallagher-Wetmore, CK Ober
Advances in Resist Technology and Processing XIII 2724, 410-417, 1996
451996
Supercritical fluid processing: Opportunities for new resist materials and processes
PM Gallagher-Wetmore, CK Ober, AH Gabor, RD Allen
Metrology, Inspection, and Process Control for Microlithography X 2725, 289-299, 1996
431996
Synthesis and lithographic characterization of block copolymer resists consisting of both poly (styrene) blocks and hydrosiloxane-modified poly (diene) blocks
AH Gabor, EA Lehner, G Mao, LA Schneggenburger, CK Ober
Chemistry of materials 6 (7), 927-934, 1994
421994
Line-edge roughness performance targets for EUV lithography
TA Brunner, X Chen, A Gabor, C Higgins, L Sun, CA Mack
Extreme Ultraviolet (EUV) Lithography VIII 10143, 101430E, 2017
342017
Pitch-based subresolution assist feature design
LW Liebmann, AH Gabor, RL Gordon, CA Fonseca, M Burkhardt
US Patent 6,964,032, 2005
322005
Bilayer resist and process for preparing same
CK Ober, AH Gabor, EA Lehner, G Mao, LA Schneggenburger
US Patent 5,318,877, 1994
291994
Photogenerators of sulfamic acids; use in chemically amplified single layer resists
K JM, T AG, M AN, B JJ
Journal of Photopolymer Science and Technology 11 (3), 419-429, 1998
281998
High-NA swing curve effects
TA Brunner, AH Gabor, CHJ Wu, N Chen
Optical Microlithography XIV 4346, 1050-1057, 2001
262001
193 nm single layer resist strategies, concepts, and recent results
O Nalamasu, FM Houlihan, RA Cirelli, AG Timko, GP Watson, RS Hutton, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 1998
241998
Sidewall image transfer process with multiple critical dimensions
S Raghunathan, S Kanakasabapathy, RO Jung, AH Gabor, SD Burns, ...
US Patent 8,673,165, 2014
232014
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