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stephanie Anceau
stephanie Anceau
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Zitiert von
Zitiert von
Jahr
Nanofocused X-ray beam to reprogram secure circuits
S Anceau, P Bleuet, J Clédière, L Maingault, J Rainard, R Tucoulou
Cryptographic Hardware and Embedded Systems–CHES 2017: 19th International …, 2017
642017
Determination of built-in electric fields in quaternary InAlGaN heterostructures
H Teisseyre, T Suski, SP Łepkowski, S Anceau, P Perlin, P Lefebvre, ...
Applied physics letters 82 (10), 1541-1543, 2003
312003
Time-resolved spectroscopy of (Al, Ga, In) N based quantum wells: Localization effects and effective reduction of internal electric fields
P Lefebvre, S Anceau, P Valvin, T Taliercio, L Konczewicz, T Suski, ...
Physical Review B 66 (19), 195330, 2002
302002
Optical properties of ZnO nanorods and nanowires
A Mézy, S Anceau, T Bretagnon, P Lefebvre, T Taliercio, GC Yi, J Yoo
Superlattices and Microstructures 39 (1-4), 358-365, 2006
202006
Electrical modeling of the effect of photoelectric laser fault injection on bulk cmos design
L Hériveaux, J Clédière, S Anceau
ISTFA 2013, 361-368, 2013
142013
Laboratory x-rays operando single bit attacks on flash memory cells
L Maingault, S Anceau, M Sulmont, L Salvo, J Clédière, P Lhuissier, ...
International Conference on Smart Card Research and Advanced Applications …, 2021
62021
Surprisingly low built‐in electric fields in quaternary AlInGaN heterostructures
S Anceau, P Lefebvre, T Suski, SP Łepkowski, H Teisseyre, LH Dmowski, ...
physica status solidi (a) 201 (2), 190-194, 2004
52004
Etude des propriétés physiques des puits quantiques d'alliages quaternaires (Al, Ga, In) N pour la conception d'émetteurs ultraviolets
S Anceau
Montpellier 2, 2004
42004
Backside Shield against Physical Attacks for Secure ICs
S Borel, E Deschaseaux, J Charbonnier, P Medina, S Anceau, J Cledière, ...
Device Packaging, 1-15, 2017
12017
Enhancement of localization and confinement effects in quaternary group‐III nitride multi‐quantum wells on SiC substrate
S Anceau, P Lefebvre, T Suski, L Konczewicz, H Hirayama, Y Aoyagi
physica status solidi (a) 202 (4), 642-646, 2005
12005
Small Built‐in Electric Fields in Quaternary InAlGaN Heterostructures
H Teisseyre, T Suski, SP Łepkowski, S Anceau, P Perlin, P Lefebvre, ...
physica status solidi (b) 234 (3), 764-768, 2002
12002
X ray nanoprobe for fault attacks and circuit edits on 28-nm integrated circuits
S Bouat, S Anceau, L Maingault, J Clediere, L Salvo, R Tucoulou
2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and …, 2023
2023
Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al, Ga, In) N pour les composants optoélectroniques
S Anceau, P Lefebvre, T Suski, L Konczewicz, H Hirayama, Y Aoyagi
Journées du GDR" Semiconducteurs à Grands Gaps"., 2004
2004
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures
S Anceau, SP Łepkowski, H Teisseyre, T Suski, P Perlin, P Lefebvre, ...
UV Solid-State Light Emitters and Detectors, 215-222, 2004
2004
Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells
S Anceau, H Teisseyre, T Suski, S Lepkowsky, L Konczewicz, P Lefebvre, ...
Joint 19th AIRAPT-41th EHPRG Int. Conf. on High Pressure Science and Technology, 2003
2003
Internal electric fields in quaternary InAlGaN heterostructures
H Teisseyre, T Suski, S Lepkowsky, S Anceau, P Perlin, P Lefebvre, ...
5th International Conference on Nitride Semiconductors-ICNS 5., 2003
2003
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Time-resolved spectroscopy of (Al, Ga, In) N based quantum wells: Localization effects and …
P Lefebvre, S Anceau, P Valvin, T Taliercio, L Konczewicz, T Suski, ...
Physical Review-Section B-Condensed Matter 66 (19), 195330-195330, 2002
2002
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