Roll-to-roll production of 30-inch graphene films for transparent electrodes S Bae, H Kim, Y Lee, X Xu, JS Park, Y Zheng, J Balakrishnan, T Lei, ... Nature nanotechnology 5 (8), 574, 2010 | 9555 | 2010 |
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ... Small 9 (19), 3295-3300, 2013 | 353 | 2013 |
A new approach for molecular electronic junctions with a multilayer graphene electrode G Wang, Y Kim, M Choe, TW Kim, T Lee Advanced Materials 23 (6), 755-760, 2011 | 196 | 2011 |
Flexible molecular-scale electronic devices S Park, G Wang, B Cho, Y Kim, S Song, Y Ji, MH Yoon, T Lee Nature nanotechnology 7 (7), 438-442, 2012 | 180 | 2012 |
Three-dimensional structure of acyl carrier protein determined by NMR pseudoenergy and distance geometry calculations TA Holak, SK Kearsley, Y Kim, JH Prestegard Biochemistry 27 (16), 6135-6142, 1988 | 141 | 1988 |
Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe2 SY Choi, Y Kim, HS Chung, AR Kim, JD Kwon, J Park, YL Kim, SH Kwon, ... ACS applied materials & interfaces 9 (4), 3817-3823, 2017 | 132 | 2017 |
High-dose of vitamin C supplementation reduces amyloid plaque burden and ameliorates pathological changes in the brain of 5XFAD mice SY Kook, KM Lee, Y Kim, MY Cha, S Kang, SH Baik, H Lee, R Park, ... Cell death & disease 5 (2), e1083-e1083, 2014 | 110 | 2014 |
Effects of multi-layer graphene capping on Cu interconnects CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ... Nanotechnology 24 (11), 115707, 2013 | 94 | 2013 |
Alloyed 2D metal–semiconductor atomic layer junctions AR Kim, Y Kim, J Nam, HS Chung, DJ Kim, JD Kwon, SW Park, J Park, ... Nano letters 16 (3), 1890-1895, 2016 | 88 | 2016 |
Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing J Yoon, Y Jeong, H Kim, S Yoo, HS Jung, Y Kim, Y Hwang, Y Hyun, ... Nature communications 7 (1), 1-10, 2016 | 81 | 2016 |
Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee Carbon 60, 453-460, 2013 | 64 | 2013 |
Enhanced Performance of MoS2 Photodetectors by Inserting an ALD‐Processed TiO2 Interlayer Y Pak, W Park, S Mitra, AA Sasikala Devi, K Loganathan, Y Kumaresan, ... Small 14 (5), 1703176, 2018 | 62 | 2018 |
Alloyed 2D metal–semiconductor heterojunctions: origin of interface states reduction and schottky barrier lowering Y Kim, AR Kim, JH Yang, KE Chang, JD Kwon, SY Choi, J Park, KE Lee, ... Nano letters 16 (9), 5928-5933, 2016 | 61 | 2016 |
Self‐Formed Channel Devices Based on Vertically Grown 2D Materials with Large‐Surface‐Area and Their Potential for Chemical Sensor Applications C Kim, JC Park, SY Choi, Y Kim, SY Seo, TE Park, SH Kwon, B Cho, ... Small 14 (15), 1704116, 2018 | 58 | 2018 |
Investigation of the transition voltage spectra of molecular junctions considering frontier molecular orbitals and the asymmetric coupling effect G Wang, Y Kim, SI Na, YH Kahng, J Ku, S Park, YH Jang, DY Kim, T Lee The Journal of Physical Chemistry C 115 (36), 17979-17985, 2011 | 49 | 2011 |
LADA prevalence estimation and insulin dependency during follow‐up Y Park, S Hong, L Park, J Woo, S Baik, M Nam, K Lee, Y Kim, ... Diabetes/metabolism research and reviews 27 (8), 975-979, 2011 | 46 | 2011 |
Optimized NH/sub 3/annealing Process for high-quality HfSiON gate oxide MS Akbar, HJ Cho, R Choi, CS Kang, CY Kang, CH Choi, SJ Rhee, ... IEEE Electron Device Letters 25 (7), 465-467, 2004 | 37 | 2004 |
Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing YJ Kim, W Park, JH Yang, Y Kim, BH Lee IEEE Journal of the Electron Devices Society 6, 164-168, 2017 | 36 | 2017 |
Effect of PEDOT: PSS–molecule interface on the charge transport characteristics of the large-area molecular electronic junctions G Wang, SI Na, TW Kim, Y Kim, S Park, T Lee Organic Electronics 13 (5), 771-777, 2012 | 36 | 2012 |
Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics R Choi, K Onishi, CS Kang, HJ Cho, YH Kim, S Krishnan, MS Akbar, ... IEEE Electron Device Letters 24 (3), 144-146, 2003 | 36 | 2003 |