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Sanghyeon Kim, S. Kim, S.-H. Kim, S. H. Kim, SH. Kim
Sanghyeon Kim, S. Kim, S.-H. Kim, S. H. Kim, SH. Kim
KAIST, Korea Institute of Science and Technology (KIST), imec, The University of Tokyo
Verified email at kaist.ac.kr - Homepage
Title
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Cited by
Year
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current …
R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ...
Applied Physics Letters 100 (13), 132906, 2012
1762012
Self-aligned metal source/drain In x Ga 1− x As n-MOSFETs using Ni-InGaAs alloy
SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 26.6. 1-26.6. 4, 2010
120*2010
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
M Noguchi, SH Kim, M Yokoyama, O Ichikawa, T Osada, M Hata, ...
Journal of Applied Physics 118 (4), 045712, 2015
922015
III–V/Ge channel MOS device technologies in nano CMOS era
S Takagi, R Zhang, J Suh, SH Kim, M Yokoyama, K Nishi, M Takenaka
Japanese Journal of Applied Physics 54 (6S1), 06FA01, 2015
892015
High mobility CMOS technologies using III–V/Ge channels on Si platform
S Takagi, SH Kim, M Yokoyama, R Zhang, N Taoka, Y Urabe, T Yasuda, ...
Solid-state electronics 88, 2-8, 2013
862013
A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator
TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ...
Nano energy 37, 242-247, 2017
852017
Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications
WJC Dae-Myeong Geum, Min-Su Park, Ju Young Lim, Hyun-Duk Yang, Jin Dong Song ...
Scientific Reports 6 (20610), 2016
772016
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Buried Oxide Layers
M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ...
IEEE electron device letters 32 (9), 1218-1220, 2011
712011
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Tunability
SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ...
IEEE Transactions on Electron Devices 61 (5), 1354-1360, 2014
642014
Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display
CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ...
Optics Express 25 (3), 2489-2495, 2017
632017
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding
M Yokoyama, R Iida, SH Kim, N Taoka, Y Urabe, T Yasuda, H Takagi, ...
2010 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2010
612010
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ...
2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011
582011
Formation of III–V-on-insulator structures on Si by direct wafer bonding
M Yokoyama, R Iida, Y Ikku, S Kim, H Takagi, T Yasuda, H Yamada, ...
Semiconductor science and technology 28 (9), 094009, 2013
552013
MOS interface and channel engineering for high-mobility Ge/III-V CMOS
S Takagi, R Zhang, SH Kim, N Taoka, M Yokoyama, JK Suh, R Suzuki, ...
2012 International Electron Devices Meeting, 23.1. 1-23.1. 4, 2012
512012
III-V/Ge MOS device technologies for low power integrated systems
MT S Takagi, M Noguchi, M Kim, S-H Kim, C-Y Chang, M Yokoyama, K Nishi, R ...
Solid-State Electronics, 2016
492016
High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology
SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ...
IEEE transactions on electron devices 60 (10), 3342-3350, 2013
492013
Sub-60-nm Extremely Thin Body -On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
S Kim, M Yokoyama, N Taoka, R Nakane, T Yasuda, O Ichikawa, ...
IEEE transactions on electron devices 60 (8), 2512-2517, 2013
482013
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
R Suzuki, N Taoka, M Yokoyama, SH Kim, T Hoshii, T Maeda, T Yasuda, ...
Journal of Applied Physics 112 (8), 084103, 2012
482012
Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding
CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ...
ACS Photonics 5 (11), 4413-4422, 2018
472018
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
CM Kang, SJ Kang, SH Mun, SY Choi, JH Min, S Kim, JP Shim, DS Lee
Scientific reports 7 (1), 1-9, 2017
472017
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