Jochen Rentsch
Jochen Rentsch
Bestätigte E-Mail-Adresse bei ise.fraunhofer.de
Titel
Zitiert von
Zitiert von
Jahr
Very low surface recombination velocity on -type -Si by high-rate plasma-deposited aluminum oxide
P Saint-Cast, D Kania, M Hofmann, J Benick, J Rentsch, R Preu
Applied Physics Letters 95 (15), 151502, 2009
2662009
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water
A Moldovan, F Feldmann, K Kaufmann, S Richter, M Werner, C Hagendorf, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-6, 2015
1652015
High-efficiency c-Si solar cells passivated with ALD and PECVD aluminum oxide
P Saint-Cast, J Benick, D Kania, L Weiss, M Hofmann, J Rentsch, R Preu, ...
IEEE Electron Device Letters 31 (7), 695-697, 2010
1562010
Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride
J Seiffe, L Gautero, M Hofmann, J Rentsch, R Preu, S Weber, RA Eichel
Journal of Applied Physics 109 (3), 034105, 2011
872011
Recent developments in rear-surface passivation at Fraunhofer ISE
M Hofmann, S Janz, C Schmidt, S Kambor, D Suwito, N Kohn, J Rentsch, ...
Solar energy Materials and Solar cells 93 (6-7), 1074-1078, 2009
802009
Photovoltaics report
B Burger, K Kiefer, C Kost, S Nold, S Philipps, R Preu, J Rentsch, ...
Fraunhofer Institute for Solar Energy Systems, Freiburg 24, 2014
652014
Simple cleaning and conditioning of silicon surfaces with UV/ozone sources
A Moldovan, F Feldmann, G Krugel, M Zimmer, J Rentsch, M Hermle, ...
Energy Procedia 55, 834-844, 2014
542014
Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation
M Hofmann, C Schmidt, N Kohn, J Rentsch, SW Glunz, R Preu
Progress in Photovoltaics: Research and Applications 16 (6), 509-518, 2008
502008
PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells.
M Hofmann, S Kambor, C Schmidt, D Grambole, J Rentsch, SW Glunz, ...
Advances in OptoElectronics, 2008
442008
High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers
P Saint-Cast, D Kania, R Heller, S Kuehnhold, M Hofmann, J Rentsch, ...
Applied surface science 258 (21), 8371-8376, 2012
432012
PV-Tec: Photovoltaic technology evaluation center-design and implementation of a production research unit
D Biro, R Preu, SW Glunz, S Rein, J Rentsch, G Emanuel, I Brucker, ...
Proceedings of the 21st European Photovoltaic Solar Energy Conference, 621-624, 2006
412006
Variation of the layer thickness to study the electrical property of PECVD Al2O3/c-Si interface
P Saint-Cast, YH Heo, E Billot, P Olwal, M Hofmann, J Rentsch, SW Glunz, ...
Energy Procedia 8, 642-647, 2011
382011
Advanced analytical model for the effective recombination velocity of locally contacted surfaces
P Saint-Cast, M Rüdiger, A Wolf, M Hofmann, J Rentsch, R Preu
Journal of Applied Physics 108 (1), 013705, 2010
372010
Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers
P Saint-Cast, A Richter, E Billot, M Hofmann, J Benick, J Rentsch, R Preu, ...
Thin Solid Films 522, 336-339, 2012
362012
Cost modeling of silicon solar cell production innovation along the PV value chain
S Nold, N Voigt, L Friedrich, D Weber, I Hädrich, M Mittag, H Wirth, ...
Proceedings of the 27th European Photovoltaic Solar Energy Conference and …, 2012
282012
Alternative rear surface passivation for industrial cell production
J Seiffe, L Weiss, M Hofmann, L Gautero, J Rentsch
Proceedings of the 23rd European Photovoltaic Solar Energy Conference, 1700-1703, 2008
272008
Thermal oxidation as a key technology for high efficiency screen printed industrial silicon solar cells
D Biro, S Mack, A Wolf, A Lemke, U Belledin, D Erath, B Holzinger, ...
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001594-001599, 2009
252009
Impact of thermal treatment on PECVD Al2O3 passivation layers
S Kühnhold, B Kafle, L Kroely, P Saint-Cast, M Hofmann, J Rentsch, ...
Energy Procedia 27, 273-279, 2012
232012
All-screen-printed 120-µm-thin large-area silicon solar cells applying dielectric rear passivation and laser-fired contacts reaching 18% efficiency
L Gautero, M Hofmann, J Rentsch, A Lemke, S Mack, J Seiffe, J Nekarda, ...
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001888-001893, 2009
232009
Isotropic plasma texturing of mc-Si for industrial solar cell fabrication
J Rentsch, N Kohn, F Bamberg, K Roth, S Peters, R Ludemann, R Preu
Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005
232005
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