| Full correction of the self-absorption in soft-fluorescence extended X-ray-absorption fine structure L Tröger, D Arvanitis, K Baberschke, H Michaelis, U Grimm, E Zschech Physical Review B 46 (6), 3283, 1992 | 481 | 1992 |
| Efficient hydrogen production on MoNi4 electrocatalysts with fast water dissociation kinetics J Zhang, T Wang, P Liu, Z Liao, S Liu, X Zhuang, M Chen, E Zschech, ... Nature communications 8, 15437, 2017 | 243 | 2017 |
| In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures MA Meyer, M Herrmann, E Langer, E Zschech Microelectronic Engineering 64 (1-4), 375-382, 2002 | 122 | 2002 |
| In situ observation of electromigration-induced void migration in dual-damascene interconnect structures AV Vairagar, SG Mhaisalkar, A Krishnamoorthy, KN Tu, AM Gusak, ... Applied physics letters 85 (13), 2502-2504, 2004 | 101 | 2004 |
| X-ray microscopy in Zernike phase contrast mode at 4 keV photon energy with 60 nm resolution U Neuhäusler, G Schneider, W Ludwig, MA Meyer, E Zschech, ... Journal of Physics D: Applied Physics 36 (10A), A79, 2003 | 100 | 2003 |
| Advanced interconnects for ULSI technology M Baklanov, PS Ho, E Zschech Wiley, 2012 | 94 | 2012 |
| Microstructural characterization of inlaid copper interconnect lines PR Besser, E Zschech, W Blum, D Winter, R Ortega, S Rose, M Herrick, ... Journal of Electronic Materials 30 (4), 320-330, 2001 | 92 | 2001 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength V Sukharev, E Zschech Journal of Applied Physics 96 (11), 6337-6343, 2004 | 78 | 2004 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure V Sukharev, E Zschech, WD Nix Journal of Applied Physics 102 (5), 053505, 2007 | 75 | 2007 |
| Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2 R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ... Thin Solid Films 437 (1-2), 248-256, 2003 | 72 | 2003 |
| Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures G Schneider, G Denbeaux, EH Anderson, B Bates, A Pearson, MA Meyer, ... Applied physics letters 81 (14), 2535-2537, 2002 | 53 | 2002 |
| Applying X-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias LW Kong, JR Lloyd, KB Yeap, E Zschech, A Rudack, M Liehr, A Diebold Journal of applied physics 110 (5), 053502, 2011 | 48 | 2011 |
| Nano-Raman spectroscopy with metallized atomic force microscopy tips on strained silicon structures L Zhu, C Georgi, M Hecker, J Rinderknecht, A Mai, Y Ritz, E Zschech Journal of Applied Physics 101 (10), 104305, 2007 | 46 | 2007 |
| Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation E Zschech, MA Meyer, E Langer MRS Online Proceedings Library Archive 812, 2004 | 45 | 2004 |
| 100 years of the physics of diodes P Zhang, Á Valfells, LK Ang, JW Luginsland, YY Lau Applied Physics Reviews 4 (1), 011304, 2017 | 44 | 2017 |
| Microstructure effect on EM-induced degradations in dual inlaid copper interconnects V Sukharev, A Kteyan, E Zschech, WD Nix IEEE Transactions on Device and Materials Reliability 9 (1), 87-97, 2009 | 44 | 2009 |
| Influence of nitrogen content on the crystallization behavior of thin Ta–Si–N diffusion barriers R Hübner, M Hecker, N Mattern, A Voss, J Acker, V Hoffmann, K Wetzig, ... Thin Solid Films 468 (1-2), 183-192, 2004 | 42 | 2004 |
| Microstructure, hardness profile and tensile strength in welds of AA6013 T6 extrusions LA Guitterez, G Neye, E Zschech Welding Journal 75 (4), 1996 | 39 | 1996 |
| Electromigration early failure void nucleation and growth phenomena in Cu and Cu (Mn) interconnects M Hauschildt, C Hennesthal, G Talut, O Aubel, M Gall, KB Yeap, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 2C. 1.1-2C. 1.6, 2013 | 38 | 2013 |
| Effect of nitrogen content on the degradation mechanisms of thin Ta–Si–N diffusion barriers for Cu metallization R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, H Heuer, ... Thin Solid Films 500 (1-2), 259-267, 2006 | 38 | 2006 |
Valeriy SukharevTechnical Lead, Mentor Graphics Corp.Verified email at mentor.com