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Martin Guttmann
Martin Guttmann
Ferdinand-Braun-Institut & Institute of Solid State Physics, Technische Universität Berlin
Bestätigte E-Mail-Adresse bei physik.tu-berlin.de
Titel
Zitiert von
Zitiert von
Jahr
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
2062018
Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ...
Applied Physics Letters 105 (5), 2014
1322014
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 2015
992015
Degradation effects of the active region in UV-C light-emitting diodes
J Glaab, J Haefke, J Ruschel, M Brendel, J Rass, T Kolbe, A Knauer, ...
Journal of Applied Physics 123 (10), 2018
672018
High-power UV-B LEDs with long lifetime
J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ...
Gallium Nitride Materials and Devices X 9363, 182-194, 2015
622015
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ...
Photonics Research 8 (4), 589-594, 2020
612020
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
C Kuhn, L Sulmoni, M Guttmann, J Glaab, N Susilo, T Wernicke, ...
Photonics Research 7 (5), B7-B11, 2019
612019
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ...
Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019
602019
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
N Lobo-Ploch, F Mehnke, L Sulmoni, HK Cho, M Guttmann, J Glaab, ...
Applied Physics Letters 117 (11), 2020
572020
Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs
F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016
562016
Improved injection efficiency in 290 nm light emitting diodes with Al (Ga) N electron blocking heterostructure
T Kolbe, F Mehnke, M Guttmann, C Kuhn, J Rass, T Wernicke, M Kneissl
Applied Physics Letters 103 (3), 2013
562013
Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs
J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ...
Journal of Crystal Growth 464, 185-189, 2017
472017
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ...
Photonics Research 5 (2), A44-A51, 2017
452017
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ...
Scientific reports 11 (1), 14647, 2021
422021
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
F Mehnke, L Sulmoni, M Guttmann, T Wernicke, M Kneissl
Applied Physics Express 12 (1), 012008, 2019
402019
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
L Sulmoni, F Mehnke, A Mogilatenko, M Guttmann, T Wernicke, M Kneissl
Photonics Research 8 (8), 1381-1387, 2020
392020
Effect of the GaN: Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs
N Susilo, J Enslin, L Sulmoni, M Guttmann, U Zeimer, T Wernicke, ...
physica status solidi (a) 215 (10), 1700643, 2018
292018
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
M Guttmann, A Susilo, L Sulmoni, N Susilo, E Ziffer, T Wernicke, M Kneissl
Journal of Physics D: Applied Physics 54 (33), 335101, 2021
212021
Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes
J Glaab, J Ruschel, F Mehnke, M Lapeyrade, M Guttmann, T Wernicke, ...
Semiconductor Science and Technology 33 (9), 095017, 2018
212018
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
J Glaab, J Ruschel, N Lobo Ploch, HK Cho, F Mehnke, L Sulmoni, ...
Journal of Applied Physics 131 (1), 2022
192022
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