| Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells B Gao, XJ Chen, S Nakano, K Kakimoto Journal of Crystal Growth 312 (9), 1572-1576, 2010 | 96 | 2010 |
| Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells S Nakano, XJ Chen, B Gao, K Kakimoto Journal of Crystal Growth 318 (1), 280-282, 2011 | 64 | 2011 |
| Global simulation of coupled carbon and oxygen transport in a unidirectional solidification furnace for solar cells B Gao, S Nakano, K Kakimoto Journal of The Electrochemical Society 157 (2), H153-H159, 2010 | 62 | 2010 |
| Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace B Gao, S Nakano, H Harada, Y Miyamura, T Sekiguchi, K Kakimoto Journal of Crystal Growth 352 (1), 47-52, 2012 | 59 | 2012 |
| Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method B Gao, K Kakimoto Crystal Growth & Design 14 (3), 1272-1278, 2014 | 51 | 2014 |
| Thermal stress induced dislocation distribution in directional solidification of Si for PV application K Jiptner, B Gao, H Harada, Y Miyamura, M Fukuzawa, K Kakimoto, ... Journal of Crystal Growth 408, 19-24, 2014 | 43 | 2014 |
| Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace B Gao, S Nakano, K Kakimoto Journal of Crystal Growth 318 (1), 255-258, 2011 | 43 | 2011 |
| Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth B Gao, K Kakimoto Journal of Crystal Growth 312 (20), 2972-2976, 2010 | 42 | 2010 |
| Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions B Gao, S Nakano, H Harada, Y Miyamura, K Kakimoto Crystal Growth & Design 13 (6), 2661-2669, 2013 | 41 | 2013 |
| Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling B Gao, S Nakano, K Kakimoto Crystal Growth & Design 12 (1), 522-525, 2011 | 41 | 2011 |
| Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model B Gao, K Kakimoto Journal of Crystal Growth 386, 215-219, 2014 | 38 | 2014 |
| Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace B Gao, S Nakano, K Kakimoto Journal of Crystal Growth 314 (1), 239-245, 2011 | 38 | 2011 |
| Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature B Gao, K Kakimoto Journal of Crystal Growth 396, 7-13, 2014 | 33 | 2014 |
| Thermodynamic analysis of SiC polytype growth by physical vapor transport method K Kakimoto, B Gao, T Shiramomo, S Nakano, S Nishizawa Journal of Crystal Growth 324 (1), 78-81, 2011 | 33 | 2011 |
| Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth B Gao, K Kakimoto Journal of Crystal Growth 384, 13-20, 2013 | 32 | 2013 |
| Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory T Shiramomo, B Gao, F Mercier, S Nishizawa, S Nakano, Y Kangawa, ... Journal of Crystal Growth 352 (1), 177-180, 2012 | 32 | 2012 |
| Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation B Gao, XJ Chen, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 312 (22), 3349-3355, 2010 | 32 | 2010 |
| Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory T Shiramomo, B Gao, F Mercier, S Nishizawa, S Nakano, K Kakimoto Journal of Crystal Growth 385, 95-99, 2014 | 31 | 2014 |
| Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth X Liu, B Gao, K Kakimoto Journal of Crystal Growth, 2014 | 30 | 2014 |
| Crystal growth of 50cm square mono-like Si by directional solidification and its characterization Y Miyamura, H Harada, K Jiptner, J Chen, RR Prakash, S Nakano, B Gao, ... Journal of Crystal Growth, 2014 | 30 | 2014 |
Koichi KakimotoProfessor, Kyushu UniversityBestätigte E-Mail-Adresse bei riam.kyushu-u.ac.jp
