Giovanna Trevisi
Giovanna Trevisi
Researcher, IMEM-CNR Institute
Verified email at - Homepage
Cited by
Cited by
Quantum dot nanostructures and molecular beam epitaxy
S Franchi, G Trevisi, L Seravalli, P Frigeri
Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suarez, ...
Applied physics letters 98 (17), 2011
1.59 μm room temperature emission from metamorphic InAs∕ InGaAs quantum dots grown on GaAs substrates
L Seravalli, P Frigeri, G Trevisi, S Franchi
Applied Physics Letters 92 (21), 2008
Molecular beam epitaxy: an overview
P Frigeri, L Seravalli, G Trevisi, S Franchi
Elsevier, 2016
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures
L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti
Nanotechnology 20 (27), 275703, 2009
Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures
P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ...
Journal of Applied Physics 102 (8), 2007
Full Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes
J Martín-Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ...
arXiv preprint arXiv:1511.08192, 2015
Metamorphic quantum dots: quite different nanostructures
L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi
Journal of Applied Physics 108 (6), 2010
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ...
New Journal of physics 13 (2), 023022, 2011
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs
V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ...
The European Physical Journal B 56, 217-222, 2007
Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: effects of InGaAs capping
L Seravalli, C Bocchi, G Trevisi, P Frigeri
Journal of Applied Physics 108 (11), 2010
All-optical fiber Hanbury Brown & Twiss interferometer to study 1300 nm single photon emission of a metamorphic InAs quantum dot
G Muñoz-Matutano, D Barrera, CR Fernandez-Pousa, R Chulia-Jordan, ...
Scientific reports 6 (1), 27214, 2016
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer
D Colombo, S Sanguinetti, E Grilli, M Guzzi, L Martinelli, M Gurioli, ...
Journal of applied physics 94 (10), 6513-6517, 2003
Low density InAs/(In) GaAs quantum dots emitting at long wavelengths
G Trevisi, L Seravalli, P Frigeri, S Franchi
Nanotechnology 20 (41), 415607, 2009
Osteoblasts preferentially adhere to peaks on micro-structured titanium
P Lagonegro, G Trevisi, L Nasi, L Parisi, E Manfredi, S Lumetti, F Rossi, ...
Dental Materials Journal 37 (2), 278-285, 2018
2D–3D growth transition in metamorphic InAs/InGaAs quantum dots
L Seravalli, G Trevisi, P Frigeri
CrystEngComm 14 (3), 1155-1160, 2012
Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window
L Seravalli, G Trevisi, P Frigeri
CrystEngComm 14 (20), 6833-6838, 2012
Low-temperature growth of single-crystal Cu (In, Ga) Se2 films by pulsed electron deposition technique
S Rampino, M Bronzoni, L Colace, P Frigeri, E Gombia, C Maragliano, ...
Solar Energy Materials and Solar Cells 133, 82-86, 2015
Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators
D Ziss, J Martín-Sánchez, T Lettner, A Halilovic, G Trevisi, R Trotta, ...
Journal of applied physics 121 (13), 2017
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
G Muñoz-Matutano, I Suárez, J Canet-Ferrer, B Alén, D Rivas, L Seravalli, ...
Journal of applied physics 111 (12), 2012
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