Jingshan Qi (齐景山)
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Strain engineering for phosphorene: the potential application as a photocatalyst
B Sa, YL Li, J Qi, R Ahuja, Z Sun
The Journal of Physical Chemistry C 118 (46), 26560-26568, 2014
Giant and tunable valley degeneracy splitting in MoTe 2
J Qi, X Li, Q Niu, J Feng
Physical Review B 92 (12), 121403, 2015
Strain-engineering of band gaps in piezoelectric boron nitride nanoribbons
J Qi, X Qian, L Qi, J Feng, D Shi, J Li
Nano letters 12 (3), 1224-1228, 2012
On the Quantum Spin Hall Gap of Monolayer 1T′‐WTe2
F Zheng, C Cai, S Ge, X Zhang, X Liu, H Lu, Y Zhang, J Qiu, T Taniguchi, ...
Advanced Materials, 2016
Patterning of graphene
J Feng, W Li, X Qian, J Qi, L Qi, J Li
Nanoscale 4 (16), 4883-4899, 2012
Bandgap engineering of rippled MoS2 monolayer under external electric field
J Qi, X Li, X Qian, J Feng
Applied Physics Letters 102 (17), 173112, 2013
The stability and electronic properties of wurtzite and zinc-blende ZnS nanowires
H Chen, D Shi, J Qi, J Jia, B Wang
Physics Letters A 373 (3), 371-375, 2009
Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe 3: Competition of direct exchange interaction and superexchange interaction
X Chen, J Qi, D Shi
Physics Letters A 379 (1), 60-63, 2015
The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap
JS Qi, JY Huang, J Feng, DN Shi, J Li
ACS nano 5 (5), 3475-3482, 2011
Strain tuning of magnetism in Mn doped MoS2 monolayer
J Qi, X Li, X Chen, K Hu
Journal of Physics: Condensed Matter 26 (25), 256003, 2014
Gold Microplates with Well‐Defined Shapes
C Kan, C Wang, H Li, J Qi, J Zhu, Z Li, D Shi
Small 6 (16), 1768-1775, 2010
The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene
B Sa, YL Li, Z Sun, J Qi, C Wen, B Wu
Nanotechnology 26 (21), 215205, 2015
Comparative studies on the magnetic properties of ZnS nanowires doped with transition metal atoms
H Chen, D Shi, J Qi
Journal of Applied Physics 109 (8), 084338, 2011
First-principles study on the magnetic properties of transition-metal atoms doped (ZnS) 12 cluster
H Chen, D Shi, J Qi, B Wang
Journal of Magnetism and Magnetic Materials 323 (6), 781-788, 2011
Different mechanical properties of the pristine and hydrogen passivated ZnO nanowires
J Qi, D Shi, B Wang
Computational Materials Science 46 (2), 303-306, 2009
The structures and electronic properties of double-wall bismuth nanotubes from first-principle calculations
J Qi, D Shi, X Jiang
Chemical Physics Letters 460 (1), 266-271, 2008
Stable structures and electronic properties of the oriented Bi Nanowires and Nanotubes from first-principle calculations
J Qi, D Shi, J Zhao, X Jiang
The Journal of Physical Chemistry C 112 (29), 10745-10753, 2008
Structure, electronic and magnetic properties of Cr-doped (ZnS) 12 clusters: A first-principles study
H Chen, D Shi, J Qi, B Wang
Physics Letters A 374 (40), 4133-4139, 2010
Electronic and mechanical properties of ZnS nanowires with different surface adsorptions
H Chen, D Shi, J Qi, B Wang
Physica E: Low-dimensional Systems and Nanostructures 42 (1), 32-37, 2009
Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane
J Qi, X Li, X Qian
Applied Physics Letters 108 (25), 253107, 2016
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