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Martin Aagesen
Martin Aagesen
CEO Gasp Solar ApS
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Titel
Zitiert von
Zitiert von
Jahr
Single-nanowire solar cells beyond the Shockley–Queisser limit
P Krogstrup, HI Jørgensen, M Heiss, O Demichel, JV Holm, M Aagesen, ...
Nature photonics 7 (4), 306-310, 2013
9252013
Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
JV Holm, HI Jørgensen, P Krogstrup, J Nygård, H Liu, M Aagesen
Nature communications 4 (1), 1498, 2013
2372013
III–V nanowires and nanowire optoelectronic devices
Y Zhang, J Wu, M Aagesen, H Liu
Journal of Physics D: Applied Physics 48 (46), 463001, 2015
1912015
Advances in the theory of III–V nanowire growth dynamics
P Krogstrup, HI Jørgensen, E Johnson, MH Madsen, CB Sørensen, ...
Journal of Physics D: Applied Physics 46 (31), 313001, 2013
1582013
Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots
T Sand-Jespersen, J Paaske, BM Andersen, K Grove-Rasmussen, ...
Physical review letters 99 (12), 126603, 2007
1442007
Giant Fluctuations and Gate Control of the g-Factor in InAs Nanowire Quantum Dots
S Csonka, L Hofstetter, F Freitag, S Oberholzer, C Schonenberger, ...
Nano letters 8 (11), 3932-3935, 2008
1352008
Impact of the liquid phase shape on the structure of III-V nanowires
P Krogstrup, S Curiotto, E Johnson, M Aagesen, J Nygård, D Chatain
Physical review letters 106 (12), 125505, 2011
1342011
Junctions in axial III− V heterostructure nanowires obtained via an interchange of group III elements
P Krogstrup, J Yamasaki, CB Sørensen, E Johnson, JB Wagner, ...
Nano letters 9 (11), 3689-3693, 2009
1142009
Kondo physics in tunable semiconductor nanowire quantum dots
TS Jespersen, M Aagesen, C Sørensen, PE Lindelof, J Nygård
Physical Review B 74 (23), 233304, 2006
1012006
Ferromagnetic proximity effect in a ferromagnet–quantum-dot–superconductor device
L Hofstetter, A Geresdi, M Aagesen, J Nygård, C Schönenberger, ...
Physical review letters 104 (24), 246804, 2010
992010
Ferromagnetic proximity effect in a ferromagnet–quantum-dot–superconductor device
L Hofstetter, A Geresdi, M Aagesen, J Nygård, C Schönenberger, ...
Physical review letters 104 (24), 246804, 2010
992010
Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy
Y Zhang, M Aagesen, JV Holm, HI Jørgensen, J Wu, H Liu
Nano letters 13 (8), 3897-3902, 2013
842013
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids
DJ Carrad, M Bjergfelt, T Kanne, M Aagesen, F Krizek, EM Fiordaliso, ...
Advanced Materials 32 (23), 1908411, 2020
692020
Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core–shell nanowire photocathode on silicon substrates
J Wu, Y Li, J Kubota, K Domen, M Aagesen, T Ward, A Sanchez, ...
Nano letters 14 (4), 2013-2018, 2014
672014
Characterization of a Ga-assisted GaAs nanowire array solar cell on Si substrate
JP Boulanger, ACE Chia, B Wood, S Yazdi, T Kasama, M Aagesen, ...
IEEE Journal of Photovoltaics 6 (3), 661-667, 2016
662016
Facet structure of GaAs nanowires grown by molecular beam epitaxy
SO Mariager, CB Sørensen, M Aagesen, J Nygård, R Feidenhans’l, ...
Applied Physics Letters 91 (8), 2007
602007
Defect-free self-catalyzed GaAs/GaAsP nanowire quantum dots grown on silicon substrate
J Wu, A Ramsay, A Sanchez, Y Zhang, D Kim, F Brossard, X Hu, ...
Nano letters 16 (1), 504-511, 2016
582016
Influence of droplet size on the growth of self-catalyzed ternary GaAsP nanowires
Y Zhang, AM Sanchez, Y Sun, J Wu, M Aagesen, S Huo, D Kim, P Jurczak, ...
Nano letters 16 (2), 1237-1243, 2016
572016
Self-catalyzed ternary core–shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy
Y Zhang, J Wu, M Aagesen, J Holm, S Hatch, M Tang, S Huo, H Liu
Nano letters 14 (8), 4542-4547, 2014
562014
Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas
SJ MacLeod, K Chan, TP Martin, AR Hamilton, A See, AP Micolich, ...
Physical Review B 80 (3), 035310, 2009
502009
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