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Binh Le
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Year
Selection circuit for accurate memory read operations
BQ Le, M Achter, L Cleveland, P Chen
US Patent 6,768,679, 2004
3892004
Scheme for page erase and erase verify in a non-volatile memory array
PL Chen, MSC Chung, SC Hollmer, V Leung, BQ Le, M Yano
US Patent 5,995,417, 1999
2451999
Erase verify scheme for NAND flash
SC Hollmer, CY Hu, BQ Le, PL Chen, J Su, R Gutala, C Bill
US Patent 6,009,014, 1999
1611999
Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
SK Yachareni, K Kurihara, BQ Le, MSC Chung
US Patent 6,370,061, 2002
1462002
Precharging mechanism and method for NAND-based flash memory devices
A Yang, S Hollmer, BQ Le
US Patent 6,175,523, 2001
1372001
Soft program and soft program verify of the core cells in flash memory array
SK Yachareni, DG Hamilton, BQ Le, K Kurihara
US Patent 6,493,266, 2002
1132002
High-voltage CMOS level shifter
BQ Le, S Kawamura, PL Chen, S Hollmer
US Patent 5,821,800, 1998
1061998
A 5.6 MB/s 64Gb 4b/cell NAND flash memory in 43nm CMOS
C Trinh, N Shibata, T Nakano, M Ogawa, J Sato, Y Takeyama, K Isobe, ...
2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009
1032009
Drain side sensing scheme for virtual ground flash eprom array with adjacent bit charge and hold
BQ Le, PL Chen, MA Van Buskirk, SK Yachareni, MSC Chung, K Kurihara, ...
US Patent 6,510,082, 2003
852003
A 34 MB/s MLC write throughput 16 Gb NAND with all bit line architecture on 56 nm technology
RA Cernea, L Pham, F Moogat, S Chan, B Le, Y Li, S Tsao, TY Tseng, ...
IEEE Journal of Solid-State Circuits 44 (1), 186-194, 2008
812008
Method for improving read margin in a flash memory device
BQ Le, PL Chen
US Patent 6,643,177, 2003
702003
Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications
A Grossi, E Vianello, MM Sabry, M Barlas, L Grenouillet, J Coignus, ...
IEEE Transactions on Electron Devices 66 (3), 1281-1288, 2019
642019
Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations
BQ Le, PL Chen
US Patent 6,424,570, 2002
632002
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
K Kanda, M Koyanagi, T Yamamura, K Hosono, M Yoshihara, T Miwa, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
612008
A 34MB/s-program-throughput 16Gb MLC NAND with all-bitline architecture in 56nm
R Cernea, L Pham, F Moogat, S Chan, B Le, Y Li, S Tsao, TY Tseng, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
612008
Algorithm dynamic reference programming
BQ Le, PL Chen
US Patent 6,690,602, 2004
612004
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
BQ Le, A Grossi, E Vianello, T Wu, G Lama, E Beigne, HSP Wong, S Mitra
IEEE Transactions on Electron Devices 66 (1), 641-646, 2019
59*2019
128Gb 3b/Cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode
Y Li, S Lee, K Oowada, H Nguyen, Q Nguyen, N Mokhlesi, C Hsu, J Li, ...
2012 IEEE International Solid-State Circuits Conference, 436-437, 2012
562012
Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage
BQ Le, M Yano, SK Yachareni
US Patent 6,535,424, 2003
452003
Parallel page buffer verify or read of cells on a word line using a signal from a reference cell in a flash memory device
SC Hollmer, PL Chen, BQ Le
US Patent 5,638,326, 1997
451997
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