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Mohamed Elkhouly
Mohamed Elkhouly
Millimeter-wave IC Researcher
Bestätigte E-Mail-Adresse bei nokia-bell-labs.com
Titel
Zitiert von
Zitiert von
Jahr
Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate
MH Eissa, A Malignaggi, R Wang, M Elkhouly, K Schmalz, AC Ulusoy, ...
IEEE Journal of Solid-State Circuits 53 (9), 2532-2542, 2018
1112018
220–250-GHz Phased-Array Circuits in 0.13- SiGe BiCMOS Technology
M Elkhouly, S Glisic, C Meliani, F Ellinger, JC Scheytt
IEEE, 2013
63*2013
A D-band radio-on-glass module for spectrally-efficient and low-cost wireless backhaul
A Singh, M Sayginer, MJ Holyoak, J Weiner, J Kimionis, M Elkhouly, ...
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 99-102, 2020
582020
D-band phased-array TX and RX front ends utilizing radio-on-glass technology
M Elkhouly, MJ Holyoak, D Hendry, M Zierdt, A Singh, M Sayginer, ...
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 91-94, 2020
512020
245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy
K Schmalz, J Borngräber, W Debski, M Elkhouly, R Wang, PFX Neumaier, ...
IEEE Transactions on Terahertz Science and Technology 6 (2), 318-327, 2016
442016
60 GHz ultrawideband polarimetric MIMO sensing for wireless multi-gigabit and radar
APG Ariza, R Müller, F Wollenschläger, A Schulz, M Elkhouly, Y Sun, ...
IEEE Transactions on Antennas and Propagation 61 (4), 1631-1641, 2013
422013
A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
M Elkhouly, Y Mao, S Glisic, C Meliani, F Ellinger, JC Scheytt
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 305-308, 2013
402013
A 220–275 GHz direct-conversion receiver in 130-nm SiGe: C BiCMOS technology
MH Eissa, A Awny, M Ko, K Schmalz, M Elkhouly, A Malignaggi, ...
IEEE Microwave and Wireless Components Letters 27 (7), 675-677, 2017
342017
Fully integrated 2D scalable TX/RX chipset for D-band phased-array-on-glass modules
M Elkhouly, J Ha, MJ Holyoak, D Hendry, M Sayginer, R Enright, ...
2022 IEEE International Solid-State Circuits Conference (ISSCC) 65, 76-78, 2022
332022
Integrated 240-GHz dielectric sensor with DC readout circuit in a 130-nm SiGe BiCMOS technology
D Wang, K Schmalz, MH Eissa, J Borngräber, M Kucharski, M Elkhouly, ...
IEEE Transactions on Microwave Theory and Techniques 66 (9), 4232-4241, 2018
302018
A 60 GHz wideband high output P1dB up-conversion image rejection mixer in 0.25 µm SiGe technology
M Elkhouly, S Glisic, C Scheytt
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical …, 2010
232010
245 GHz SiGe transmitter array for gas spectroscopy
K Schmalz, J Borngraber, W Debski, M Elkhouly, R Wang, P Neumaier, ...
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2014
212014
60 GHz polarimetric MIMO sensing: Architectures and technology
APG Ariza, R Muller, R Stephan, F Wollenschlager, A Schulz, M Elkhouly, ...
Antennas and Propagation (EUCAP), 2012 6th European Conference on, 2578-2582, 2012
202012
A fully integrated 60 GHz transmitter front-end in SiGe BiCMOS technology
S Glisic, K Schmalz, F Herzel, R Wang, M Elkhouly, Y Sun, JC Scheytt
2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2011
202011
120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology
M Elkhouly, S Glisic, F Ellinger, JC Scheytt
Microwave Conference (GeMiC), 2012 The 7th German, 1-4, 2012
192012
Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission
S Glisic, JC Scheytt, Y Sun, F Herzel, R Wang, K Schmalz, M Elkhouly, ...
International Journal of Microwave and Wireless Technologies 3 (2), 139-145, 2011
192011
A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology
M Elkhouly, Y Mao, C Meliani, JC Scheytt, F Ellinger
IEEE Journal of Solid-State Circuits 49 (9), 1916-1926, 2014
182014
RF-MEMS switch module in a 0.25 μm BiCMOS technology
M Kaynak, M Wietstruck, W Zhang, J Drews, R Scholz, D Knoll, ...
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2012
182012
A 246 GHz Hetero-integrated frequency source in InP-on-BiCMOS technology
M Hossain, T Kraemer, I Ostermay, T Jensen, B Janke, Y Borokhovych, ...
IEEE Microwave and Wireless Components Letters 24 (7), 469-471, 2014
172014
60 GHz ultrawideband hybrid-integrated dual-polarized front-end in LTCC technology
R Muller, AP Garcia Ariza, L Xia, F Wollenschlager, A Schulz, ...
Antennas and Propagation (EUCAP), Proceedings of the 5th European Conference …, 2011
172011
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