Lanthanum-substituted bismuth titanate for use of non-volatile memories WJ B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee
Nature 400, 682, 1999
2684 * 1999 Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures R Ramesh, WK Chan, B Wilkens, H Gilchrist, T Sands, JM Tarascon, ...
Applied Physics Letters 61 (13), 1537-1539, 1992
441 1992 Oxygen vacancy clustering and electron localization in oxygen-deficient SrTiO 3: LDA+ U study B Lee, KM Choi, HS Ahn, S Han, J Lee
Physical review letters 98 (11), 115503, 2007
336 2007 Voltage Offsets in (Pb,La)(Zr,Ti)O3 Thin Films J G. E. Pike, W. L. Warren, D. Dimos, B. A. Tuttle, R. Ramesh, J. Lee, V. G ...
Appl. Phys. Lett 66, 484, 1995
322 * 1995 All graphene-based thin film transistors on flexible plastic substrates SK Lee, HY Jang, S Jang, E Choi, BH Hong, J Lee, S Park, JH Ahn
Nano letters 12 (7), 3472-3476, 2012
285 2012 Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 WJ B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H. D. Kim, T. H. Kim
Appl. Phys. Lett 74, 1907, 1999
275 1999 Effects of very thin strain layers on dielectric properties of epitaxial films BH Park, EJ Peterson, QX Jia, J Lee, X Zeng, W Si, XX Xi
Applied Physics Letters 78 (4), 533-535, 2001
202 2001 Oriented Ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures on [001] Pt/SiO2/Si Substrates using a Bismuth Titanate Template Layer TSVGKOA R. Ramesh, J. Lee
Appl. Phys. Lett. 64, 2511, 1994
200 1994 Isostructural metal-insulator transition in VO2 D Lee, B Chung, Y Shi, GY Kim, N Campbell, F Xue, K Song, SY Choi, ...
Science 362 (6418), 1037-1040, 2018
199 2018 Reliable Piezoelectricity in Bilayer WSe2 for Piezoelectric Nanogenerators JH Lee, JY Park, EB Cho, TY Kim, SA Han, TH Kim, Y Liu, SK Kim, ...
Advanced Materials 29 (29), 1606667, 2017
198 2017 Large nonlinear dielectric properties of artificial superlattices J Kim, Y Kim, YS Kim, J Lee, L Kim, D Jung
Applied physics letters 80 (19), 3581-3583, 2002
188 2002 Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin‐film capacitors with La‐Sr‐Co‐O electrodes J Lee, R Ramesh, VG Keramidas, WL Warren, GE Pike, JT Evans Jr
Applied physics letters 66 (11), 1337-1339, 1995
174 1995 Density and spatial distribution of charge carriers in the intrinsic n-type LaAlO 3-SrTiO 3 interface W Son, E Cho, B Lee, J Lee, S Han
Physical Review B 79 (24), 245411, 2009
171 2009 Deep dry etching of borosilicate glass using SF6 and SF6/Ar inductively coupled plasmas JH Park, NE Lee, J Lee, JS Park, HD Park
Microelectronic engineering 82 (2), 119-128, 2005
170 2005 Characterization of amorphous SiC:H Films Deposited from Hexamethyldisilazane MTKJ Lee
Thin Solid Films 303, 173, 1997
159 1997 Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors J Lee, L Johnson, A Safari, R Ramesh, T Sands, H Gilchrist, ...
Applied physics letters 63 (1), 27-29, 1993
152 1993 Strain manipulation in artificial lattice toward high dielectric constant and its nonlinearity L Kim, D Jung, J Kim, YS Kim, J Lee
Applied physics letters 82 (13), 2118-2120, 2003
147 2003 First-principles modeling of resistance switching in perovskite oxide material SH Jeon, BH Park, J Lee, B Lee, S Han
Applied physics letters 89 (4), 2006
145 2006 Oxygen-vacancy-induced ferromagnetism in CeO 2 from first principles X Han, J Lee, HI Yoo
Physical Review B 79 (10), 100403, 2009
136 2009 Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors TWNJKL J. Lee, C. H. Choi, B. H. Park
Appl. Phys. Lett. 72, 3380, 1998
131 1998