Dietz Nikolaus
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Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
The growth and optical properties of large, high-quality single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of Applied Physics 96 (10), 5870-5876, 2004
ultraviolet/infrared dual-band detector
G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ...
Applied physics letters 89 (9), 091113, 2006
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz
Acta materialia 50 (6), 1275-1287, 2002
Native defect related optical properties of ZnGeP2
N Dietz, I Tsveybak, W Ruderman, G Wood, KJ Bachmann
Applied physics letters 65 (22), 2759-2761, 1994
Sellmeier parameters for and GaP
FL Madarasz, JO Dimmock, N Dietz, KJ Bachmann
Journal of Applied Physics 87 (3), 1564-1565, 2000
Magnetic and optical properties of Ga1− x Mn x N grown by metalorganic chemical vapour deposition
MH Kane, A Asghar, CR Vestal, M Strassburg, J Senawiratne, ZJ Zhang, ...
Semiconductor science and technology 20 (3), L5, 2005
Different optical absorption edges in AlN bulk crystals grown in - and -orientations
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar
Applied Physics Letters 93 (13), 131922, 2008
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
V Woods, N Dietz
Materials Science and Engineering: B 127 (2-3), 239-250, 2006
High-rate GaAs epitaxial lift-off technique for optoelectronic integrated circuits
Jpn. J. Appl. Phys 36 (3B Pt 1), 1554-1557, 1997
Characterization of InN layers grown by high-pressure chemical vapor deposition
M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ...
Applied physics letters 89 (11), 112119, 2006
p-Polarized reflectance spectroscopy: a highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions
N Dietz, KJ Bachmann
Vacuum 47 (2), 133-140, 1996
Heteroepitaxy of GaP on Si (100)
KJ Bachmann, U Rossow, N Sukidi, H Castleberry, N Dietz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Orientation mediated self-assembled gallium phosphide islands grown on silicon
V Narayanan, S Mahajan, N Sukidi, KJ Bachmann, V Woods, N Dietz
Philosophical Magazine A 80 (3), 555-572, 2000
Defect identification in semiconductors by Brewster angle spectroscopy
HJ Lewerenz, N Dietz
Journal of applied physics 73 (10), 4975-4987, 1993
Real-time monitoring of epitaxial processes by parallel-polarized reflectance spectroscopy
N Dietz, KJ Bachmann
MRS Bulletin 20 (5), 49-55, 1995
The characterization of InN growth under high‐pressure CVD conditions
N Dietz, M Alevli, V Woods, M Strassburg, H Kang, IT Ferguson
physica status solidi (b) 242 (15), 2985-2994, 2005
Real-time monitoring of heteroepitaxial growth processes on the silicon (001) surface by p-polarized reflectance spectroscopy
KJ Bachmann, U Rossow, N Dietz
Materials Science and Engineering: B 35 (1-3), 472-478, 1995
Stacking faults and twins in gallium phosphide layers grown on silicon
V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz
Philosophical Magazine A 82 (4), 685-698, 2002
Real-time optical characterization of thin film growth
N Dietz
Materials Science and Engineering: B 87 (1), 1-22, 2001
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