| Spin-orbit coupling and phase coherence in InAs nanowires SE Hernández, M Akabori, K Sladek, C Volk, S Alagha, H Hardtdegen, ... Physical Review B 82 (23), 235303, 2010 | 105 | 2010 |
| Effect of Si-doping on InAs nanowire transport and morphology S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ... Journal of applied physics 110 (5), 053709, 2011 | 70 | 2011 |
| Probing relaxation times in graphene quantum dots C Volk, C Neumann, S Kazarski, S Fringes, S Engels, F Haupt, A Müller, ... Nature communications 4, 1753, 2013 | 69 | 2013 |
| Transport in graphene nanostructures C Stampfer, S Fringes, J Güttinger, F Molitor, C Volk, B Terrés, J Dauber, ... Frontiers of Physics 6 (3), 271-293, 2011 | 63 | 2011 |
| Etched graphene quantum dots on hexagonal boron nitride S Engels, A Epping, C Volk, S Korte, B Voigtländer, K Watanabe, ... Applied Physics Letters 103 (7), 073113, 2013 | 45 | 2013 |
| Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios B Terrés, J Dauber, C Volk, S Trellenkamp, U Wichmann, C Stampfer Applied physics letters 98 (3), 032109, 2011 | 39 | 2011 |
| Electronic excited states in bilayer graphene double quantum dots C Volk, S Fringes, B Terrés, J Dauber, S Engels, S Trellenkamp, ... Nano letters 11 (9), 3581-3586, 2011 | 38 | 2011 |
| Charge detection in a bilayer graphene quantum dot S Fringes, C Volk, C Norda, B Terrés, J Dauber, S Engels, S Trellenkamp, ... physica status solidi (b) 248 (11), 2684-2687, 2011 | 30 | 2011 |
| Graphene-based charge sensors C Neumann, C Volk, S Engels, C Stampfer Nanotechnology 24 (44), 444001, 2013 | 24 | 2013 |
| Loading a quantum-dot based “Qubyte” register C Volk, AMJ Zwerver, U Mukhopadhyay, PT Eendebak, CJ van Diepen, ... npj Quantum Information 5 (1), 1-8, 2019 | 22 | 2019 |
| Reducing disorder in graphene nanoribbons by chemical edge modification J Dauber, B Terrés, C Volk, S Trellenkamp, C Stampfer Applied physics letters 104 (8), 083105, 2014 | 22 | 2014 |
| Qubit device integration using advanced semiconductor manufacturing process technology R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ... 2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018 | 18 | 2018 |
| Quantum dot arrays in silicon and germanium WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ... Applied Physics Letters 116 (8), 080501, 2020 | 16 | 2020 |
| Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires S Wirths, M Mikulics, P Heintzmann, A Winden, K Weis, C Volk, K Sladek, ... Applied physics letters 100 (4), 042103, 2012 | 13 | 2012 |
| Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields A Epping, S Engels, C Volk, K Watanabe, T Taniguchi, S Trellenkamp, ... physica status solidi (b) 250 (12), 2692-2696, 2013 | 12 | 2013 |
| Fabrication of coupled graphene–nanotube quantum devices S Engels, P Weber, B Terres, J Dauber, C Meyer, C Volk, S Trellenkamp, ... Nanotechnology 24 (3), 035204, 2012 | 12 | 2012 |
| Fabrication of coupled graphene–nanotube quantum devices S Engels, P Weber, B Terres, J Dauber, C Meyer, C Volk, S Trellenkamp, ... Nanotechnology 24 (3), 035204, 2012 | 12 | 2012 |
| Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate AA Zhukov, C Volk, A Winden, H Hardtdegen, T Schäpers JETP letters 93 (1), 10-14, 2011 | 12 | 2011 |
| Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate C Volk, A Chatterjee, F Ansaloni, CM Marcus, F Kuemmeth Nano Letters 19 (8), 5628-5633, 2019 | 10 | 2019 |
| The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate AA Zhukov, C Volk, A Winden, H Hardtdegen, T Schäpers Journal of Physics: Condensed Matter 26 (16), 165304, 2014 | 10 | 2014 |
