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R.C.G. Naber
R.C.G. Naber
ECM Greentech
Verified email at ecmtech.fr
Title
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Cited by
Year
High-performance solution-processed polymer ferroelectric field-effect transistors
RCG Naber, C Tanase, PWM Blom, GH Gelinck, AW Marsman, ...
Nature materials 4 (3), 243-248, 2005
10282005
Organic nonvolatile memory devices based on ferroelectricity
RCG Naber, K Asadi, PWM Blom, DM De Leeuw, B De Boer
Advanced materials 22 (9), 933-945, 2010
6012010
Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions
HB Akkerman, RCG Naber, B Jongbloed, PA van Hal, PWM Blom, ...
Proceedings of the National Academy of Sciences 104 (27), 11161-11166, 2007
2212007
Low-voltage polymer field-effect transistors for nonvolatile memories
RCG Naber, B De Boer, PWM Blom, DM De Leeuw
Applied Physics Letters 87 (20), 2005
2212005
Low voltage switching of a spin cast ferroelectric polymer
RCG Naber, PWM Blom, AW Marsman, DM De Leeuw
Applied Physics Letters 85 (11), 2032-2034, 2004
1812004
All-polymer ferroelectric transistors
GH Gelinck, AW Marsman, FJ Touwslager, S Setayesh, DM De Leeuw, ...
Applied Physics Letters 87 (9), 2005
1512005
High charge density and mobility in poly (3-hexylthiophene) using a polarizable gate dielectric
RCG Naber, M Mulder, B De Boer, PWM Blom, DM De Leeuw
Organic electronics 7 (3), 132-136, 2006
1122006
Origin of the drain current bistability in polymer ferroelectric field-effect transistors
RCG Naber, J Massolt, M Spijkman, K Asadi, PWM Blom, DM De Leeuw
Applied Physics Letters 90 (11), 2007
952007
High-performance solution-deposited ambipolar organic transistors based on terrylene diimides
C Liu, Z Liu, HT Lemke, HN Tsao, RCG Naber, Y Li, K Banger, K Müllen, ...
Chemistry of materials 22 (6), 2120-2124, 2010
762010
A gate dielectric that enables high ambipolar mobilities in polymer light-emitting field-effect transistors
RCG Naber, M Bird, H Sirringhaus
Applied Physics Letters 93 (2), 2008
662008
An Organic Field‐Effect Transistor with Programmable Polarity
RCG Naber, PWM Blom, GH Gelinck, AW Marsman, DM De Leeuw
Advanced materials 17 (22), 2692-2695, 2005
562005
Comment on ‘Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir–Blodgett films’
RCG Naber, PWM Blom, DM De Leeuw
Journal of Physics D: Applied Physics 39 (9), 1984, 2006
482006
Optimization of BBr3 diffusion processes for n-type silicon solar cells
S Werner, E Lohmüller, U Belledin, AHG Vlooswijk, RCG Naber, S Mack, ...
31st European Photovoltaic Solar Energy Conference; Hamburg, Germany, 2015
232015
19% efficient n-type Si solar cells made in pilot production
AR Burgers, RCG Naber, AJ Carr, PC Barton, LJ Geerligs, X Jingfeng, ...
Petten: ECN, 2010
212010
Solar cell and method for manufacturing such a solar cell
LJ Geerligs, G Li, PC Barton, RCG Naber, AF Stassen, Z Hu
US Patent 8,623,688, 2014
122014
ECN n-type silicon solar cell technology: an industrial process that yields 18.5%
RCG Naber, N Guillevin, AR Burgers, LJ Geerligs, AW Weeber
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000990-000992, 2009
112009
Method of Manufacturing of a Solar Cell and Solar Cell Thus Obtained
M Lenes, RCG Naber, JRM Luchies, A Hasper
US Patent App. 15/762,507, 2018
102018
n-PERT solar cells with passivated contact technology based on LPCVD polysilicon and fire-through contact metallization
RCG Naber, M Lenes, AHG Vlooswijk, JRM Luchies, J Wang, F Zheng, ...
32nd European Photovoltaic Solar Energy Conference and Exhibition, 430-433, 2016
102016
Development of 2-sided polysilicon passivating contacts for co-plated bifacial n-PERT cells
S Singh, P Choulat, F Duerinckx, MR Payo, R Naber, M Lenes, L Tous, ...
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0449-0452, 2020
82020
Large area co‐plated bifacial n‐PERT cells with polysilicon passivating contacts on both sides
S Singh, P Choulat, J Govaerts, A van der Heide, V Depauw, F Duerinckx, ...
Progress in Photovoltaics: Research and Applications 30 (8), 899-909, 2022
72022
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