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Sandip Bhattacharya
Sandip Bhattacharya
BASF, Germany
Bestätigte E-Mail-Adresse bei tcd.ie - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Two-step phase transition in SnSe and the origins of its high power factor from first principles
A Dewandre, O Hellman, S Bhattacharya, AH Romero, GKH Madsen, ...
Physical review letters 117 (27), 276601, 2016
1122016
High-throughput exploration of alloying as design strategy for thermoelectrics
S Bhattacharya, GKH Madsen
Physical Review B 92 (8), 085205, 2015
902015
A novel p-type half-Heusler from high-throughput transport and defect calculations
S Bhattacharya, GKH Madsen
Journal of Materials Chemistry C 4, 11261-11268, 2016
762016
Novel ternary sulfide thermoelectric materials from high throughput transport and defect calculations
S Bhattacharya, R Chmielowski, G Dennler, GKH Madsen
Journal of Materials Chemistry A 4 (28), 11086-11093, 2016
382016
Spin transport properties of triarylamine-based nanowires
S Bhattacharya, A Akande, S Sanvito
Chemical Communications 50 (50), 6626-6629, 2014
382014
Unraveling self‐doping effects in thermoelectric TiNiSn half‐Heusler compounds by combined theory and high‐throughput experiments
M Wambach, R Stern, S Bhattacharya, P Ziolkowski, E Müller, ...
Advanced Electronic Materials 2 (2), 1500208, 2016
372016
High thermoelectric performance of tellurium doped paracostibite
R Chmielowski, S Bhattacharya, W Xie, D Péré, S Jacob, R Stern, ...
Journal of Materials Chemistry C 4 (15), 3094-3100, 2016
372016
Strong Reduction of Thermal Conductivity and Enhanced Thermoelectric Properties in CoSbS1-xSex Paracostibite
R Chmielowski, S Bhattacharya, S Jacob, D Péré, A Jacob, K Moriya, ...
Scientific Reports 7 (1), 46630, 2017
312017
Achieving optimum carrier concentrations in p-doped SnS thermoelectrics
S Bhattacharya, GNS Gunda, R Stern, S Jacobs, R Chmielowski, ...
Phys. Chem. Chem. Phys. 17, 9161-9166, 2015
312015
First principles study of the structural, electronic, and transport properties of triarylamine-based nanowires
A Akande, S Bhattacharya, T Cathcart, S Sanvito
Journal of Chemical Physics 140 (074301), 2014
132014
The search for a spin crossover transition in small sized π-conjugated molecules: a Monte Carlo study
S Bhattacharya, MS Ferreira, S Sanvito
Journal of Physics: Condensed Matter 23 (31), 316001, 2011
62011
Nitrogen Ion Induced 2D-GaN Layer Formation of GaAs (001) Surface
P Kumar, S Bhattacharya, BR Mehta, SM Shivaprasad
Journal of Nanoscience and Nanotechnology 9 (9), 5659-5663, 2009
62009
A Novel Design of Reversible Gate using Quantum-Dot Cellular Automata (QCA)
A Roy, AD Singh, A Saha, S Saha, V Gupta, Z Qingyi, S Bhattacharya, ...
2020 IEEE 1st International Conference for Convergence in Engineering (ICCE …, 2020
42020
Mathematical Modelling of Drain Current Enhancement in High-k FD MOSFET
A Pandey, A Saha, K Ghosh, S Bhattacharya, J Sanyal
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 95-98, 2020
32020
Investigation of density and alignment of ZnO-nanowires grown by double-step chemical bath deposition (CBD/CBD) technique on metallic, insulating and semiconducting substrates
S Bhattacharya, R Saha, S Sikdar, S Mandal, C Das, S Chattopadhyay
2020 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2020
32020
Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET
S Bhattacharya, P Ray, J Sanyal
2018 Emerging Trends in Electronic Devices and Computational Techniques …, 2018
22018
Unraveling Self-Doping Effects in Thermoelectric TiNiSn Half-Heusler Compounds by Combined Theory and High-Throughput Experiments (vol 2, 1500208, 2016)
M Wambach, R Stern, S Bhattacharya, P Ziolkowski, E Mueller, ...
ADVANCED ELECTRONIC MATERIALS 2 (3), 2016
12016
Simulation and machine learning based analytical study of single electron transistor (SET)
J Chatterjee, J Khatun, Siddhi, A Kumar, K Ghosh, J Sanyal, ...
Journal of Computational Electronics, 1-12, 2024
2024
Voltage-assisted selective growth of ZnO nanowires on metal/semiconductor surfaces employing hydrothermal double-step CBD/CBD growth technique
S Bhattacharya, R Saha, S Mandal, D Bhattacharya, S Chattopadhyay
Journal of Materials Science: Materials in Electronics 34 (36), 2319, 2023
2023
Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET)
A Kumar, SK Pandey, K Ghosh, J Sanyal, S Bhattacharya
2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022
2022
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