Iris Niehues
Iris Niehues
Institute of Physics, University of Münster
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Cited by
Strain control of exciton–phonon coupling in atomically thin semiconductors
I Niehues, R Schmidt, M Druppel, P Marauhn, D Christiansen, M Selig, ...
Nano letters 18 (3), 1751-1757, 2018
Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2.
J Kern, I Niehues, P Tonndorf, R Schmidt, D Wigger, R Schneider, ...
Advanced materials (Deerfield Beach, Fla.) 28 (33), 7101-7105, 2016
Phonon sidebands in monolayer transition metal dichalcogenides
D Christiansen, M Selig, G Berghäuser, R Schmidt, I Niehues, ...
Physical review letters 119 (18), 187402, 2017
Reversible uniaxial strain tuning in atomically thin WSe2
R Schmidt, I Niehues, R Schneider, M Drueppel, T Deilmann, M Rohlfing, ...
2D Materials 3 (2), 021011, 2016
Nanoantenna-Enhanced Light–Matter Interaction in Atomically Thin WS2
J Kern, A Trügler, I Niehues, J Ewering, R Schmidt, R Schneider, ...
Acs Photonics 2 (9), 1260-1265, 2015
Single-photon emitters in GaSe
P Tonndorf, S Schwarz, J Kern, I Niehues, O Del Pozo-Zamudio, ...
2D Materials 4 (2), 021010, 2017
Inverted valley polarization in optically excited transition metal dichalcogenides
G Berghäuser, I Bernal-Villamil, R Schmidt, R Schneider, I Niehues, ...
Nature communications 9 (1), 971, 2018
Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
NS Taghavi, P Gant, P Huang, I Niehues, R Schmidt, ...
Nano Research 12, 1691-1695, 2019
Interlayer excitons in bilayer MoS 2 under uniaxial tensile strain
I Niehues, A Blob, T Stiehm, SM de Vasconcellos, R Bratschitsch
Nanoscale 11 (27), 12788-12792, 2019
Dark exciton anti-funneling in atomically thin semiconductors
R Rosati, R Schmidt, S Brem, R Perea-Causín, I Niehues, J Kern, ...
Nature Communications 12 (1), 7221, 2021
Strain transfer across grain boundaries in MoS2 monolayers grown by chemical vapor deposition
I Niehues, A Blob, T Stiehm, R Schmidt, V Jadriško, B Radatović, ...
2D Materials 5 (3), 031003, 2018
Strain-dependent exciton diffusion in transition metal dichalcogenides
R Rosati, S Brem, R Perea-Causín, R Schmidt, I Niehues, ...
2D Materials 8 (1), 015030, 2020
Strain tuning of the Stokes shift in atomically thin semiconductors
I Niehues, P Marauhn, T Deilmann, D Wigger, R Schmidt, A Arora, ...
Nanoscale 12 (40), 20786-20796, 2020
Real-space observation of ultraconfined in-plane anisotropic acoustic terahertz plasmon polaritons
S Chen, PL Leng, A Konečná, E Modin, M Gutierrez-Amigo, E Vicentini, ...
Nature Materials 22 (7), 860-866, 2023
Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors
T Stiehm, R Schneider, J Kern, I Niehues, S Michaelis de Vasconcellos, ...
Review of Scientific Instruments 90 (8), 2019
Exciton broadening and band renormalization due to Dexter-like intervalley coupling
I Bernal-Villamil, G Berghäuser, M Selig, I Niehues, R Schmidt, ...
2D Materials 5 (2), 025011, 2018
The acetone bandpass detector for inverse photoemission: Operation in proportional and Geiger–Müller modes
C Thiede, I Niehues, AB Schmidt, M Donath
Measurement Science and Technology 29 (6), 065901, 2018
Percolating Superconductivity in Air‐Stable Organic‐Ion Intercalated MoS2
JM Pereira, D Tezze, I Niehues, Y Asensio, H Yang, L Mester, S Chen, ...
Advanced Functional Materials 32 (52), 2208761, 2022
Uniaxial strain tuning of Raman spectra of a monolayer
I Niehues, T Deilmann, J Kutrowska-Girzycka, A Taghizadeh, L Bryja, ...
Physical Review B 105 (20), 205432, 2022
Identification of weak molecular absorption in single-wavelength s-SNOM images
I Niehues, L Mester, E Vicentini, D Wigger, M Schnell, R Hillenbrand
Optics Express 31 (4), 7012-7022, 2023
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